Abstract: Atomic-scale smooth Pt electrode films have been deposited on MgO/TiN buffered Si (100) by the pulsed laser deposition (PLD) technique. The whole growth process of the multilayer films was monitored by using in-situ reflection high energy electron diffraction (RHEED) apparatus. The Pt/MgO/TiN/Si(100)
stacked structure was also characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The HREED observations show that the growth mode of the Pt electrode film is 2D layer-by-layer growth. It is found that the (111)-oriented Pt electrode film has a
crystallinity comparable to that of monocrystals. The achievement of the quasi-single-crystal Pt electrode film with an atomic-scale smooth surface is ascribed to the improved crystalline quality of the MgO film.
Abstract: The precursor solution of titanium oxide coating was prepared by using titanium-oxygen sulfide. Solution with PH value of 8.5 was used to for coating on the surface of glass through dipping. The coatings were analyzed with DSC, AFM and XRD. The hydrophilic results of titanium oxide coating were obtained according the water contact angle measurement in the sunlight irradiation condition. The experimental results demonstrate that this solution is a good precursor for coating of
titanium oxide, and the coatings treated at a higher temperature have shown good hydrophilic property.
Abstract: Antimony-doped tin oxide thin films have a range of technical applications as conductive coatings, and sol-gel processing seems to offer some advantages over other coating techniques. In this study, the sol was prepared by sol-gel approach from SnO2·H2O and SbCl3 in alcohol. It was found that the heat-treatment temperature and doping level have strong influences on the microstructure and
composition of Sb: SnO2 films. The SnO2 crystals exist mainly as tetragonal rutile structure. The optimum heat-treatment temperature is about 450 ~ 500°C, and the film is composed with nanocrystals and nano-pores. Microstructure and the electrical behaviors of Sb-doped SnO2 thin films derived by sol-gel process were investigated.
Abstract: Undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol-gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogeneous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the experimental data, the sheet resistance of the films could be as low as 100-200Ω/□
Abstract: Relaxor-based 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were grown epitaxially on silicon substrates by sol-gel method and PbO cover coat technique, and investigated by x-ray diffraction, auger electron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The phase development and microstrure evolution of the PMN-PT film were significantly
affected by the final annealing temperature and time. A perovskite PMN-PT film was obtained after annealing at 850oC for 1 min. Then, highly <100>-oriented and textured PMN-PT films could be achieved by using a LaNiO3 perovskite template.
Abstract: The preparation and the microstructure of BaBi4Ti4O15 (BBT) thin films were reported in the paper. BBT thin films were fabricated on silicon substrate using a modified Sol-Gel technique. A key issue of Sol-Gel processing is the chemical reaction and mechanism of precursor solution, which governs the crystallization and characteristics of the final oxide layer. Ethanolamine is an effective complexation
reagent of Bi3+, which could moderate the acidity of precursor. When pH value is about 3.5, the stable and uniform BBT precursor solution could be obtained. The Bi-layered perovskite structure of BBT forms at 750°C. The morphology of the grains in BBT thin films is spheroidal and the grain size is about 120nm.
Abstract: Bilayer Ba0.6Sr0.4TiO3 - Ba0.4Sr0.6TiO3 and Ba0.4Sr0.6TiO3 - Ba0.6Sr0.4TiO3 thin films were deposited on the LaNiO3-buffered Pt/Ti/SiO2/Si substrates using pulse laser deposition method. A (100)preferred orientation was obtained. The structure was characterized using x-ray diffraction (XRD) and Raman spectroscopy. The leakage current, and dielectric permittivity versus temperature were characterized. Results indicated that the (100) preferred bilayer structure had less leakage current and smaller loss tangent, which was in favor of enhancing the quality of thin film used as microwave
Abstract: A liquid source misted chemical vapor deposition (LSMCVD) system was used to deposit SrBi2Ta2O9 ferroelectric thin films on Pt/TiO2/SiO2/Si substrates using strontium nitrate, bismuth nitrate and fluorine tantalum acid as the starting ingredients. Citric acid, ethylene glycol, and ethylenediaminetetraacctic
acid were employed as chelating agents to form homogeneous and stable sol. A density, homogenous, crack-free and c-axis oriented SrBi2Ta2O9 thin films were prepared successfully and the resultant thin film exhibits the ferroelectric properties of 2Pr of 3.8 C/cm2, 2Ec of 60kV/cm at ±3.5 V,
Abstract: The problem with zeolite crystals synthesized by conventional method is that they are extremely small of two to eight microns, To better define the structure of zeolite, scientist need to grow crystal that are 100 to 1000 times larger. In this work, Large crystal zeolite X of uniform crystal size of 50µm were grown by a continuous crystallization method from seed crystals (5-10µm) in a mother solution having a composition 3.5Na2O : Al2O3 : 2.1SiO2 : 1000H2O. In order to grow crystals of zeolite X to an appropriate size by the continuous method, the mother solution was supplied into the starting solution with various seed content (3~20wt%) in an autoclave at 90°C after 7 days, 12days, 16days, 19days and 24 days, respectively.