PRICM-5

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Authors: Ying Qin, Chuang Dong, Xiao Gang Wang, Sheng Zhi Hao, Jian Xin Zou, Ai Min Wu, Yue Liu
Abstract: The simulation of the temperature reveals an ultra high heating/cooling rates in the order of 108~109 K/s and melted layer thickness micrometers in depth. A temperature-induced dynamic thermal stress fields can then generate three principal stress, the quasi-static stress, the thermoelastic stress, and the shock stress, the latter two being stress waves. The thermoelastic stress wave has small amplitudes less than 0.1 MPa. The shock stress wave however is a typical nonlinear wave, several hundreds of MPa in amplitude, much stronger than the thermoelastic stress wave, and has a strong impact on materials structure and properties far beyond the heat-affected zone. The maximum compressive quasi-static stress in the surface layer in aluminum reaches several hundreds of MPa, which easily induces surface deformation in metallic materials.
3673
Authors: Wen Long Jiang, Yu Duan, Yi Zhao, Jingying Hou, Shi Yong Liu
Abstract: In this paper, we describe the performance of an organic light emitting devices〔OLEDs〕 with ITO /4,4’,4“-tris{N,- ( 3-methylphenyl ) -N-phenylamino}triphenylamine (m-MTDATA) /N,N-diphenyl-N,N-bis1-naphthyl-1,1-biphenyl-4,4-diamine (NPB) /copper phthalocyanine (CuPc) / NPB / Bathocuproine(BCP) / tris-8-hydroxyquinoline Aluminum (Alq3) / LiF/ AL structure, the CuPc inserted between the two layers of NPB as a hole-consuming layer (HCL), and the BCP as a hole-blocking layer (HBL) . The EL spectrum peak is at 430 nm, indicating that the carrier recombination is confined in the NPB layer, in additional light emission originates from NPB. Compared with the luminous efficiency of the conventional diode without CuPc layer, that of the diode with HCL has been sharply increased up to 2.62 cd /A. It suggested that the CuPc and BCP exactly function as hole-consuming and hole-blocking layers, respectively, which enhance the efficiency of carrier,s recombination and confine the excitation in the EL layer.
3677
Authors: D.Y. Xu, Yan Ping Liu, Z.Y. Chen, Z.W. He, Xing Qin Liu, Y.Y. Wang
Abstract: Tb-doped silicon carbide (SiC:Tb) films were deposited on porous silicon (PS) substrates by rf co-sputtering. The prepared films were annealed in N2 atmosphere at different temperature from 500-1000 °C. The effects of annealing on the structure and photoluminescence (PL) characters of the films were investigated by Atomic force microscopy (AFM), Raman, Fourier transform infrared spectroscope (FTIR) and fluorescence spectrometer. The SiOx layer at the SiC:Tb/PS interface was destroyed as the annealing temperature increasing, and the oxygen-deficiency centers (ODCs) increased. The SiOx layer was restructured at higher annealing temperature and the ODCs decreased. This is the reason of origin and changing of UV band in PL spectra. The visible band origins from Tb3+, and is stable with annealing temperature.
3681
Authors: Yang Ping Li, Zheng Tang Liu
Abstract: Long-wave infrared windows and domes used under harsh conditions always suffer sand abrasion and raindrop erosion. GaP thin film has proved to be effective LWIR protective coating for zinc sulphide window. In this article, the GaP films have been deposited on 5-mm-thick thermo-pressed planar ZnS substrates by RF magnetron sputtering in high pure Ar gas, with a single crystalline GaP disc as the target. The maxima of the GaP/ZnS transmission spectra curve are less than the corresponding transmissivities of ZnS substrates, which indicates that the GaP films are of absorption. SEM results show that the films are very compact and their surfaces are glazed. XPS analysis shows that gallium content is more than phosphor content in the films, and oxygen is the main impurity. The more the gallium content is, the more absorption the film is of. The absorption does not vary greatly with oxygen content. So the absorption of the film is caused mainly by the overfull metal component, which increases the conductivity and causes the charge carrier absorption. Low absorption GaP film with the thickness more than 10 µm has been deposited, in which the Ga:P ratio is nearly 1:1.
3685
Authors: Hui Zhong Ma, Lan Zhang, Jun Jie Zhang, Yun Hai Du, Ning Yao, Bing Lin Zhang
Abstract: A flexible carbon thin film was prepared by laser induced when phase changing of polyimide thin film. There is no substrate for this thin film. It could be curved at any angle. The electron emission properties of the prepared thin film were measured by a diode mechanism; the thin film was used as a cathode and indium-tin-oxide (ITO) glass as an anode. The turn-on field of the thin film was about 2.1 V/µm. The current density of the thin film was about 150 µA/cm2 at the electric field of 4.5 V/µm. The electron emission measurements indicate that the thin film could be a good candidate electron emission material in flat panel display or be used as other electron source. The morphology and structure of the thin film were investigated by optical microscope and Raman spectroscopy.
3689
Authors: Wen Xiu Cheng, Ai Li Ding, Ping Sun Qiu
Abstract: Amorphous and crystalline (Zr0.8,Sn0.2)TiO4 (ZST) thin films deposited on Si(100) substrates have been prepared by a sol-gel process. The crystal structure and surface morphologies of the thin films have been studied by X-ray diffraction and atomic force microscopy. The crystalline ZST films on Si(100) substrata with a (111) orientation The refractive index n and extinction coefficient k of the amorphous and crystalline thin films were obtained by spectroscopy ellipsometry as a function of phone energy in the range from 0.7 to 5.4 eV. The absorption edges for amorphous and crystalline ZST are 3.83 and 3.51eV of indirect–transition type respectively.
3693
Authors: Q. Wei, S.Y. He, J.C. Liu, D.Z. Yang
Abstract: Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2×1016 cm-2, the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment.
3697
Authors: Feng Ji, Jin Ma, Yu Heng Wang, Hong-Lei Ma, Xihu Yu, Fu Jian Zong
Abstract: SnO2 films were prepared by atmosphere pressure chemical vapor deposition (APCVD) method. The preparation, structure and photoluminescence (PL) properties of the SnO2 films were investigated. All the obtained films were polycrystalline with the rutile structure. A violet (396 nm) and a blue (446 nm) photoluminescence peaks were observed at room temperatures. The intensity of the PL peaks located at 3.13 eV decreased with increasing the annealing temperature. The emission mechanism of the SnO2 films has been investigated.
3701
Authors: Aiwu Li, Hua Xing, Cuiling Zhou, Jian Shen, Letian Zhang, Wei Zheng, Yushu Zhang
Abstract: Sn-doped SiO2 thin films were fabricated on Si substrates by the Sol-Gel method. Permanent refractive index change was found using ultraviolet (UV) laser radiation at 248 nm. The photoinduced refractive index change increased after radiation and variety in the contents of Tin. The optical and surface properties of the films were characterized using X-ray photoelectron spectroscopy (XPS) and variable angle spectroscopic ellipsometry (VASE).
3705
Authors: Li Ping Feng, Zheng Tang Liu
Abstract: As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3~5 µm.
3709

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