A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs

Patrick Fiorenza; Alessia Frazzetto; Lukas K. Swanson; Filippo Giannazzo; Fabrizio Roccaforte

doi:10.4028/www.scientific.net/MSF.740-742.699

Paper Titles

4H-SiC Trench MOSFET with Thick Bottom Oxide
p.683

An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
p.687

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
p.691

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
p.695

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
p.699

Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability
p.703

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs
p.707

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors
p.711

Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces
p.715

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742A Nanoscale Look in the Channel of 4H-SiC Lateral...

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs

Abstract:

In this work the field effect mobility measured on lateral n-channel MOSFETs in 4H-SiC with Al implanted body was correlated with the interface trap density measured on MOS capacitors. The test devices were fabricated on samples subjected to different post implantation annealing conditions (i.e. with or without a protective carbon capping layer) and to an identical post-oxidation annealing in N₂O. Despite the improved interfacial morphology, a reduction of the peak mobility (from 40 to 24 cm²V^-1s^-1) was observed using the carbon capping layer. An increase in the density of interface traps was consistently found. Nanoscale measurements of the active dopant concentration in the SiC channel region by cross-sectional scanning capacitance microscopy showed an higher compensation of p-type SiC for the sample processed without the capping layer, which indicates a more efficient incorporation of nitrogen at the SiO₂/SiC interface.