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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Behaviour of a Well-Designed Megasonic Cleaning...

Behaviour of a Well-Designed Megasonic Cleaning System

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Ultra Clean Processing of Silicon Surfaces VII

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.155

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Online since:

April 2005

Authors:

Alexander Lippert, P. Engesser, Garry Ferrell, J. Klitzke, Martin Köffler, Franz Kumnig, Jörg Leberzammer, Rainer Obweger, Alexander Pfeuffer, Harald Okorn-Schmidt, Harry Sax

Keywords:

Cavitation, Damage, Megasonic, PRE, PRU, Sonoluminescence, Uniformity

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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[1] G. W. Ferrell, L.A. Crum: J. Acoust. Soc. Am., Vol. 112, No. 3, Pt. 1, Sep. 2002.

[2] F. Holsteyns, A. Riskin, G. Vereecke, A. Maes, P.M. Mertens: Electrochemical Society PV 2003-26.

[3] A. Tomozawa, A. Onishi, H. Kinoshita, T. Nakano: Proceedings of the Fifth International Symposium on Ultra Clean Processing of Silicon Surfaces UCPSS 2000. Fig. 1: PRE as a function of temperature at a constant megasonic power and APM concentration Fig. 2: Etch rate of silicon oxide in dependence of different APM and temperatures Fig. 3: Pre-measurement of a Si3N4 particle wafer (particle size 100 - 500nm) Fig. 4: Post-measurement shows excellent and uniform cleaning efficiency (particle size 100 - 500nm) Fig. 5: High resolution picture of sonoluminescence activity on a 200mm wafer Fig. 6: Corresponding high-resolution picture of sonoluminescence activity on a 200-mm wafer Fig. 7: First image of the wafer tilting series. The tilting angle is 0° and sonoluminescence can be seen only under the wafer Fig. 8: Second image of the wafer tilting series. The tilting angle is about 35°. The sound transmits through the wafer and sonoluminescence can be observed on both sides of the wafer Fig. 9: Third image of the wafer tilting series. The tilting angle is over 35°. The sound transmission is lost and sonoluminescence above the wafer disappears again Fig. 10: Light intensity measurement above the tilting wafer 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 0 4 9 10 11 12 13 14 MEG. POWER Setting [a.u.] Cleaning Efficiency [%] >100nm >120nm >160nm >200nm Fig. 11: PRE and Damage data as a function of megasonic power in APM 1:2:100 at a constant room temperature