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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20

Solid State Phenomena Vols. 19-20

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20

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Table of Contents

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Paper Title Page

A Search on the Identity of the Ev+0.34 eV C-Related Defect in p-Si

Authors: Charalamos A. Londos

247

Simulation of Hydrogen Diffusion in n and p Type Silicon: Determination of Kinetic and Thermodynamic Parameters

Authors: D. Ballutaud, R. Rizk, P. de Mierry

253

Hydrogen Passivation of Grain Boundaries in Polysilicon: Computer Simulation

Authors: L.E. Polyak, E.A. Katz

259

Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures

Authors: Sergei V. Koveshnikov, S.V. Nosenko, A.M. Surma

265

Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers

Authors: H. Gdanitz, G. Ritter

271

Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF₄ and CBrF₃ Plasma Etching

Authors: Yu.P. Baryshev, A.A. Orlikovsky, K.A. Valiev, M.N. Zolotukhin

277

Formation and Properties of Metastable Silicide Precipitates in Silicon

Authors: Michael Seibt, Wolfgang Schröter

283

Mechanical Behaviour of Semiconductors in Terms of Dislocation Dynamics

Authors: Ichiro Yonenaga, Koji Sumino

295

Dislocation Kink Dynamics and Gettering Processes in Semiconductors

Authors: B.Ya. Farber, Yu.L. Iunin, V.I. Nikitenko, Valeri I. Orlov

311

Local Distribution of Structure Defects Induced by Microhardness Indentation in GaAs

Authors: T. Wosiński, Otwin Breitenstein, Ch. Eisenschmidt, L. Fang

323

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