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HomeSolid State PhenomenaSolid State Phenomena Vols. 19-20

Solid State Phenomena Vols. 19-20

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.19-20

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Table of Contents

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Paper Title Page

Dynamics of a Dislocation in the Potential Relief of Semiconductor Crystals under Varying Applied Forces

Authors: D.A. Kamaev, V.M. Chernov

329

Peculiarities of Dislocation Luminescence of Covalent Semiconductors

Authors: A.N. Izotov, A.I. Kolyubakin, S.A. Shevchenko, E.A. Steinman

335

Defects in Multicrystalline Silicon

Authors: R. Schindler, A. Räuber

341

Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs

Authors: B. Sieber

353

Electrical Properties of Dislocation Impurity Atmospheres in Si

Authors: Eugene B. Yakimov, Nikolai Yarykin, Sergei V. Koveshnikov

367

Electrical Properties of Defects in Multicrystalline Silicon

Authors: Martin Kittler, J. Lärz, G. Morgenstern, Winfried Seifert

373

Process Induced Defects in TiSi₂-N⁺/P-Structures

Authors: H.B. Erzgräber, P. Zaumseil, E. Bugiel, R. Sorge, K. Tittelbach-Helmrich, F. Richter

379

Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure

Authors: Andrzej Misiuk

387

Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon

Authors: Aldo Armigliato, Andrea Parisini, M. Derdour, P. Lazzari, L. Moro, D. Nobili, Sandro Solmi

393

Defect Structures in Si Preamorphized Wafers

Authors: S. Prussin

399

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