SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

Francesco La Via; Gaetano Izzo; Marco Mauceri; Giuseppe Pistone; Giuseppe Condorelli; L.M.S. Perdicaro; Giuseppe Abbondanza; F. Portuese; G. Galvagno; Salvatore Di Franco; Lucia Calcagno; Gaetano Foti; Gian Luca Valente; Danilo Crippa

doi:10.4028/www.scientific.net/MSF.600-603.123

Paper Titles

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
p.107

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
p.111

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
p.115

Development of a Practical High-Rate CVD System
p.119

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate
p.123

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions
p.127

Multi-Level Simulation Study of Crystal Growth and Defect Formation Processes in SiC
p.131

Theoretical Monte Carlo Study of the Formation and Evolution of Defects in the Homoepitaxial Growth of SiC
p.135

Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD
p.139

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603SiC-4H Epitaxial Layer Growth by Trichlorosilane...

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

Abstract:

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.