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Practical Design of 4H-SiC Superjunction Devices in the Presence of Charge Imbalance

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Abstract:

In the ideal case, superjunction (SJ) drift regions theoretically exhibit a linear relationship between specific-on resistance Ron,sp and blocking voltage VBR, but this requires perfect charge balance between the alternating n and p pillars. If any degree of imbalance exists, the relationship becomes quadratic, similar to a conventional drift region, although with somewhat improved performance. In this work, we analyze superjunction drift regions in 4H-SiC under realistic degrees of charge imbalance and show that, with proper design, a reduction in specific on-resistance of 2~10x is possible as long as the imbalance remains less than ±20%.

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Silicon Carbide and Related Materials 2017 View Preview

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Periodical:

Materials Science Forum (Volume 924)

Pages:

563-567

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.563

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Online since:

June 2018

Authors:

Md Monzurul Alam*, Dallas Morisette, James A. Cooper

Keywords:

Drift Regions, Power Device, Silicon Carbide (SiC), Superjunctions

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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