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Gettering anf Defect Engineering in Semiconductor Technology IX

Solid State Phenomena Volumes 82 - 84

• Papers
• Abstracts

• p1 Silicon Wafer Requirements for ULSI Device Processing   [ 267 K ]
  Authors: Francesca Illuzzi
• p9 Orthogonal Defect Solutions for Silicon Crystal Growth and Wafer Processing   [ 562 K ]
  Authors: Robert Falster
• p17 On the Mechanism of Defect Suppression in Nitrogen-Doped Silicon Single Crystals   [ 464 K ]
  Authors: Wilfried von Ammon, Robert Hölzl, J. Virbulis, E. Dornberger, R. Schmolke, D. Gräf
• p25 Diffusion Coefficient and Equilibrium Concentration of Point Defects in Silicon Crystals, Estimated via Grown-in Defect Behavior   [ 468 K ]
  Authors: Kozo Nakamura, Toshiaki Saishoji, Junsuke Tomioka
• p35 The Effects of Impurities on Extended Defects in Cz Silicon Crystals Grown under Interstitial-Rich Conditions   [ 393 K ]
  Authors: Kazutaka Terashima, Hajime Noguchi
• p41 Modeling of Impurity Transport and Point Defect Formation during Cz Si Crystal Growth   [ 351 K ]
  Authors: V.V. Kalaev, V.A. Zabelin, Yu.N. Makarov
• p49 Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers   [ 480 K ]
  Authors: K. Sueoka, M. Akatsuka, Mitsuharu Yonemura, T. Ono, Eiichi Asayama, Y. Koike, S. Sadamitsu
• p57 Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies   [ 295 K ]
  Authors: L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, B.G. Svensson
• p63 Infrared Absorption Analysis of Nitrogen in Czochralski Silicon   [ 210 K ]
  Authors: Y. Yamanaka, Hiroshi Harada, K. Tanahashi, T. Mikayama, N. Inoue
• p69 Role of Nitrogen-Related Complexes in the Formation of Defects in N-Cz Silicon Wafers   [ 647 K ]
  Authors: A. Karoui, F.S. Karoui, De Ren Yang, George A. Rozgonyi