Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Anne Elisabeth Bazin, Thierry Chassagne, Jean François Michaud, André Leycuras, Marc Portail, Marcin Zielinski, Emmanuel Collard, Daniel Alquier

Abstract: In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different...

Authors: Lilyana Kolaklieva, Roumen Kakanakov, Iva Avramova, Ts. Marinova

Abstract: Electrical, morphological and chemical properties of nanolayered Au/Ti/Al ohmic contacts with different Ti:Al ratio are investigated....

Authors: Kenneth M. Robb

Abstract: In this initial phase of work, two methods of backside wafer thinning using ICP plasma etching of two-inch SiC substrates have been...

Authors: S. Takenami, Tomoaki Hatayama, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Abstract: Sloped sidewalls in 4H-SiC mesa structures on the (000-1) C face were formed by a Cl2-O2 thermal etching method. The etching rate of 4H-SiC...

Authors: Oleg Korolkov, Natalja Sleptsuk, Toomas Rang, A. Syrkin, Vladimir Dmitriev

Abstract: For more authentic comparison of Schottky parameters between combined sputter (Ti/Ni/Au) and diffusion welded (DW) Al contact and direct DW...

Authors: Yue Ke, Robert P. Devaty, Wolfgang J. Choyke

Abstract: We have fabricated columnar nano-porous SiC by photo-electrochemical etching on the C-face of n-type 6H SiC at constant voltage. SEM ...

Authors: C.K. Young, G.T. Andrews, Maynard J. Clouter, Yue Ke, Wolfgang J. Choyke, Robert P. Devaty

Abstract: Brillouin light scattering spectroscopy was used to probe porous silicon carbide films formed from p-type 6H crystalline silicon carbide....

Authors: Hideyuki Hara, Yasuhisa Sano, Hidekazu Mimura, Kenta Arima, Akihisa Kubota, Keita Yagi, Junji Murata, Kazuto Yamauchi

Abstract: We report the damage-free planarization of 4H-SiC (0001) wafers using a new planarization technique we named CAtalyst-Referred Etching...

Authors: Tomohisa Kato, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Tomonori Miura, Shin Ichi Nishizawa, Kazuo Arai

Abstract: We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface. The polishing consists...

Authors: Yasuhisa Sano, Masayo Watanabe, Kazuya Yamamura, Kazuto Yamauchi, Takeshi Ishida, Kenta Arima, Akihisa Kubota, Yuzo Mori

Abstract: Silicon carbide (SiC) is a promising semiconductor material for power devices. However, it is so hard and so chemically stable that there...


Showing 171 to 180 of 248 Paper Titles