Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Jeong Hyuk Yim, Ho Keun Song, Jeong Hyun Moon, Han Seok Seo, Jong Ho Lee, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim

Abstract: Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated...

Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling

Abstract: 4H-SiC BJTs have been fabricated with varying geometrical designs. The maximum value of the current gain was about 30 at IC=85 mA, VCE=14 V...

Authors: Qing Chun Jon Zhang, Charlotte Jonas, Bradley Heath, Mrinal K. Das, Sei Hyung Ryu, Anant K. Agarwal, John W. Palmour

Abstract: SiC IGBTs are suitable for high power, high temperature applications. For the first time, the design and fabrication of 9 kV planar p-IGBTs...

Authors: Sei Hyung Ryu, Sumi Krishnaswami, Brett A. Hull, Bradley Heath, Fatima Husna, Jim Richmond, Anant K. Agarwal, John W. Palmour, James D. Scofield

Abstract: High temperature characteristics of 4H-SiC power JFETs and DMOSFETs are presented in this paper. Both devices are based on pn junctions in...

Authors: Satoshi Tanimoto, Tatsuhiro Suzuki, Akihiro Hanamura, Masakatsu Hoshi, Toshiro Shinohara, Kazuo Arai

Abstract: This paper discusses critical reliability issues and their countermeasures for vertically structured poly-Si gate n-channel power MOSFETs...

Authors: Mitsuo Okamoto, Mieko Tanaka, Tsutomu Yatsuo, Kenji Fukuda

Abstract: It is of great importance to investigate the electrical properties of SiC p-channel MOSFETs for development of SiC CMOS technology. In the...

Authors: Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Oomori, Eisuke Tokumitsu

Abstract: We have fabricated and characterized MOS capacitors and lateral MOSFETs using Al2O3 as a gate insulator. Al2O3 films were deposited by...

Authors: Kin Kiong Lee, Michael Laube, Takeshi Ohshima, Hisayoshi Itoh, Gerhard Pensl

Abstract: In this paper we give a comparative study of two types of gate oxidation of n-channel 6HSiC MOSFETs. One set of transistors was fabricated...

Authors: G. Gudjónsson, Fredrik Allerstam, Per Åke Nilsson, Hans Hjelmgren, Einar Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, R. Jos

Abstract: We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared...

Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Abstract: 4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at...


Showing 181 to 190 of 248 Paper Titles