Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Shin Harada, Yasuo Namikawa

Abstract: The area where 4H-SiC SBDs showed high reverse currents was extracted. After KOH etching, the in-grown SF on the basal plane, composed of a...

Authors: Wolfgang Bartsch, Heinz Mitlehner, S. Gediga

Abstract: In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut...

Authors: Brett A. Hull, Joseph J. Sumakeris, Mrinal K. Das, Jim Richmond, John W. Palmour

Abstract: The development of 4H-SiC PiN diodes capable of blocking to greater than 10 kV while having current ratings of 20 A at 100 A/cm2 is...

Authors: Heu Vang, Christophe Raynaud, Pierre Brosselard, Mihai Lazar, Pierre Cremillieu, Jean Louis Leclercq, Sigo Scharnholz, Dominique Planson, Jean-Pierre Chante

Abstract: Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate...

Authors: Dorothea Werber, P. Borthen, Gerhard Wachutka

Abstract: We simulated and measured the forward characteristics of 4H-SiC pin diodes in a wide temperature range from 300K to 700K. Our simulations...

Authors: Aurelie Thuaire, Michel Mermoux, Edwige Bano, Alexandre Crisci, Francis Baillet, Konstantinos Zekentes

Abstract: Raman spectroscopy and photoemission microscopy were coupled as two complementary non-destructive optical techniques in order to study...

Authors: Takeshi Ohshima, Takahiro Satoh, Masakazu Oikawa, Shinobu Onoda, Shigeomi Hishiki, Toshio Hirao, Toshio Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, Günter Wagner, Hisayoshi Itoh

Abstract: The charge generated in 6H-SiC n+p diodes by gold (Au) ion irradiation at an energy of 12 MeV was evaluated using the Transient Ion Beam...

Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mara Passini, Giulio Pizzocchero, Roberta Nipoti

Abstract: In this work we analyzed the radiation hardness of SiC p+n diodes after very high 1 MeV neutron fluence. The diode structure is based on a...

Authors: Pavel A. Ivanov, Michael E. Levinshtein, Mykola S. Boltovets, Valentyn A. Krivutsa, John W. Palmour, Mrinal K. Das, Brett A. Hull

Abstract: Forward current-voltage (I-V) characteristics and non-equilibrium carrier lifetime, τ were measured in 4H-SiC pin diodes (10-kV rated, 100...

Authors: Andrej Mihaila, F. Udrea, S.J. Rashid, G. Amaratunga, Mitsuhiro Kataoka, Yuuichi Takeuchi, Rajesh Kumar Malhan

Abstract: An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and...


Showing 211 to 220 of 248 Paper Titles