Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: S.J. Rashid, C. Mark Johnson, F. Udrea, Andrej Mihaila, G. Amaratunga, Rajesh Kumar Malhan

Abstract: A novel high temperature wire bondless packaging technique is numerically investigated in this paper. Extraction of device effective...

Authors: Kent Bertilsson, Chris I. Harris

Abstract: Both unipolar and injection SiC devices can be used for high voltage switching applications; it is not determined, however, for which...

Authors: Ty McNutt, John Reichl, Harold Hearne, Victor Veliadis, Megan McCoy, Eric J. Stewart, Stephen Van Campen, Chris Clarke, Dave Bulgher, Dimos Katsis, Bruce Geil, Skip Scozzie

Abstract: This work utilizes silicon carbide (SiC) vertical JFETs in a cascode configuration to exploit the inherent advantages of SiC and...

Authors: Hideto Tamaso, Jiro Shinkai, Takashi Hoshino, Hitoki Tokuda, Kenichi Sawada, Kazuhiro Fujikawa, Takeyoshi Masuda, Satoshi Hatsukawa, Shin Harada, Yasuo Namikawa

Abstract: We fabricated a multi-chip module of 4H-SiC reduced surface field (RESURF)-type lateral JFETs. A single chip consists of 4 unit devices of...

Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes

Abstract: Silicon Carbide (SiC) power devices are increasingly in demand for operations which require ambient temperature over 300°C. This paper...

Authors: James D. Scofield, Hiroyuki Kosai, Brett Jordan, Sei Hyung Ryu, Sumi Krishnaswami, Fatima Husna, Anant K. Agarwal

Abstract: The performance and characterization of SiC JFETs and BJTs, used as inverter switching devices, in a 2 kW, high temperature, 33 kHz, 270-28...

Authors: Robin L. Kelley, Michael S. Mazzola, William L. Draper

Abstract: The purpose of this paper is to present an all-SiC switched AC-DC converter using active power factor correction. The typical...

Authors: Konstantinos Zekentes, Nicolas Camara, L.P. Romanov, A.V. Kirillov, Mykola S. Boltovets

Abstract: 4H-SiC p-i-n diodes were designed, fabricated and characterized for use in microwave applications. The diodes exhibited a blocking voltage...

Authors: Pierre Brosselard, Dominique Tournier, Miquel Vellvehi, Josep Montserrat, Phillippe Godignon, José Millan

Abstract: In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process technology is compatible with that of vertical power...

Authors: Christophe Raynaud, Daniel Loup, Phillippe Godignon, Raul Perez Rodriguez, Dominique Tournier, Dominique Planson

Abstract: High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve...


Showing 231 to 240 of 248 Paper Titles