Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/www.scientific.net/MSF.556-557

Paper Title Page

Authors: Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti

Abstract: Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type 4H-SiC by using wet oxidation of nitrogen implanted...

639
Authors: Jeong Hyun Moon, Kuan Yew Cheong, Da Il Eom, Ho Keun Song, Jeong Hyuk Yim, Jong Ho Lee, Hoon Joo Na, Wook Bahng, Nam Kyun Kim, Hyeong Joon Kim

Abstract: We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3,...

643
Authors: Jeong Hyun Moon, Dong Hwan Kim, Ho Keun Song, Jeong Hyuk Yim, Wook Bahng, Nam Kyun Kim, Kwang Seok Seo, Hyeong Joon Kim

Abstract: We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and...

647
Authors: Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Roberta Nipoti

Abstract: 4H-SiC p-type MOS capacitors fabricated by wet oxidation of SiC preamorphized by nitrogen ion (N+) implantation have been investigated. The...

651
Authors: Andreas Fissel, M. Czernohorsky, R. Dagris, H.J. Osten

Abstract: We investigated the growth, interface formation as well as the structural and electrical properties of crystalline gadolinium oxide (Gd2O3)...

655
Authors: Hiroaki Saitoh, Akinori Seki, Akira Manabe, Tsunenobu Kimoto

Abstract: In this study, we have investigated N2O oxidation of various off-angled 4H-SiC (0001) epilayers and characterized the properties of MOS...

659
Authors: D. Takeda, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki

Abstract: We performed high-pressure H2O vapor annealing on 4H-SiC n-MOS capacitors to control SiO2/4H-SiC interface properties. High-pressure H2O...

663
Authors: Mrinal K. Das, Sarah K. Haney, Charlotte Jonas, Qing Chun Jon Zhang, Sei Hyung Ryu

Abstract: Optimization of the thermally oxidized 4H-SiC MOS interface has produced p-channel lateral MOSFETs with hole inversion layer mobility as...

667
Authors: Sombel Diaham, Marie Laure Locatelli, Thierry Lebey

Abstract: Characterizations of Al/Polyimide/Al capacitors in a temperature range extended up to 400°C are presented. The aim is to determine the...

671
Authors: Kevin Matocha, Richard Beaupre

Abstract: Thermal oxides on 4H-SiC are characterized using time-dependent dielectric breakdown techniques at electric fields between 6 and 10 MV/cm....

675

Showing 151 to 160 of 248 Paper Titles