Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Morten Kildemo, Ulrike Grossner, Bengt Gunnar Svensson, S. Raaen

Abstract: The deposition and annealing in ultra high vacuum (UHV) of 5-6 monolayers (ML) of cerium on clean reconstructed Si-face 4H-SiC (0001) is...

Authors: Thomas Frank, Svetlana Beljakowa, Gerhard Pensl, Tsunenobu Kimoto, Valeri V. Afanas'ev

Abstract: In n-type 4H-SiC, over-oxidation of an implanted surface-near, Gaussian nitrogen-profile results in MOS capacitors, which possess a...

Authors: Roberta Nipoti

Abstract: With the aim to set a starting point for future investigations on the relevance of the heating ramp on the annealing of ion implanted SiC,...

Authors: Y. Wang, Peter A. Losee, S. Balachandran, I. Bhat, T. Paul Chow, Y. Wang, B.J. Skromme, J.K. Kim, E.F. Schubert

Abstract: Low resistance p-layers are achieved in this paper using a graphite cap to protect SiC surface from out-diffusion of Si during high...

Authors: Mariaconcetta Canino, Filippo Giannazzo, Fabrizio Roccaforte, Antonella Poggi, Sandro Solmi, Vito Raineri, Roberta Nipoti

Abstract: The surface morphology and the electrical activation of P+ implanted 4H-SiC were investigated with respect to annealing treatments that...

Authors: Kenneth A. Jones, M.C. Wood, T.S. Zheleva, K.W. Kirchner, Michael A. Derenge, A. Bolonikov, Tangali S. Sudarshan, R.D. Vispute, Shiva S. Hullavarad, S. Dhar

Abstract: 4H-SiC samples implanted with 1020 Al were annealed at various temperatures with a BN/AlN or graphite cap, and there morphological,...

Authors: Etsushi Taguchi, Yu Suzuki, Masataka Satoh

Abstract: The electrical properties of N ion implanted 3C-SiC(100) have been investigated by means of Hall effect measurement. The p-type epitaxial...

Authors: Shingo Miyagawa, Tomoyuki Suzuki, Takahiro Kudo, Masataka Satoh

Abstract: The encapsulating annealing of N+ implanted 4H-SiC(0001) is performed using diamondlike- carbon (DLC) films for the suppression of surface...

Authors: Martin Rambach, Anton J. Bauer, Heiner Ryssel

Abstract: The influence of the implantation temperature on the surface roughness and the resistivity of aluminum implanted 4H-silicon carbide was...


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