Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Wook Bahng, Hui Jong Cheong, In Ho Kang, Seong Jin Kim, Sang Cheol Kim, Sung Jae Joo, Nam Kyun Kim

Abstract: We have investigated the influence of surface modification on the electrical properties of SiC diodes. Schottky diodes (SBDs) as well as...

Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev

Abstract: High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...

Authors: L. Storasta, Hidekazu Tsuchida

Abstract: Reduction in deep level defects and increase of carrier lifetime in 4H-SiC epilayer was observed after carbon ion implantation into the...

Authors: Sergey A. Reshanov, Heiko B. Weber, Gerhard Pensl, Adolf Schöner, Hiroyuki Nagasawa

Abstract: Selenium (Se) and tellurium (Te) ions are implanted into n-type 6H-, 4H- and 3C-SiC epilayers. Double-correlated deep level transient...

Authors: Erwan Oliviero, Mihai Lazar, Heu Vang, Christiane Dubois, Pierre Cremillieu, Jean Louis Leclercq, Jacques Dazord, Dominique Planson

Abstract: 6H and 4H–SiC epilayers were Al-implanted at room temperature with multiple energies (ranging from 25 to 300 keV) in order to form p-type...

Authors: Toshiharu Ohnuma, Atsumi Miyashita, Misako Iwasawa, Masahito Yoshikawa, Hidekazu Tsuchida

Abstract: We performed the dynamical simulation of the SiO2/4H-SiC(0001) interface oxidation process using first-principles molecular dynamics based...

Authors: Alton B. Horsfall, Ming Hung Weng, Rajat Mahapatra, Nicolas G. Wright

Abstract: We present the variation of trap assisted conduction current through a dielectric stack comprising TiO2 and SiO2 on SiC as a function of...

Authors: Svetlana Beljakowa, Thomas Frank, Gerhard Pensl, Kun Yuan Gao, Florian Speck, Thomas Seyller

Abstract: An alternative oxidation technique is developed and built up, which provides monatomic oxygen during the whole oxidation process. The...

Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Einar Ö. Sveinbjörnsson

Abstract: The effect of the different types of passivation layers on the current gain of SiC BJTs has been investigated. Measurements have been...

Authors: Junji Senzaki, Atsushi Shimozato, Kenji Fukuda

Abstract: Acceleration factors in acceleration life test of thermal oxides grown on 4H-SiC(0001) wafers and influences of dislocations on oxide...


Showing 141 to 150 of 248 Paper Titles