Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Owen J. Guy, T.E. Jenkins, Michal Lodzinski, A. Castaing, S.P. Wilks, P. Bailey, T.C.Q. Noakes

Abstract: The high density of interface states of thermally grown oxides on silicon carbide has prompted research into alternative oxidation methods...

Authors: Kok Keong Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy, D. Kurt Gaskill

Abstract: Hydrogen etching of 4H-SiC has been performed in a hot-wall chemical vapor deposition reactor to reduce surface damage and to create a...

Authors: Fredrik Allerstam, G. Gudjónsson, Einar Ö. Sveinbjörnsson, T. Rödle, R. Jos
Authors: Atsumi Miyashita, Toshiharu Ohnuma, Misako Iwasawa, Hidekazu Tsuchida, Masahito Yoshikawa

Abstract: The performance of SiC MOSFET devices to date is below theoretically expected performance levels. This is widely considered to be...

Authors: Konstantin V. Emtsev, Thomas Seyller, Florian Speck, Lothar Ley, P. Stojanov, J.D. Riley, R.C.G. Leckey

Abstract: Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED....

Authors: M. Hetzel, Charíya Virojanadara, Wolfgang J. Choyke, Ulrich Starke

Abstract: Ordered reconstruction phases on the 4H-SiC(1102) surface have been investigated using low-energy electron diffraction (LEED), Auger...

Authors: M. Silly, H. Enriquez, J. Roy, M. D'Angelo, P. Soukiassian, T. Schuelli, M. Noblet, G. Renaud

Abstract: In order to give experimental insights on the atomic structure of the Si atomic wires developing on the β-SiC(100) surface, we use...

Authors: Marc Avice, Ulrike Grossner, Ola Nilsen, Helmer Fjellvåg, Bengt Gunnar Svensson

Abstract: Al2O3 has been grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on ntype 4H-SiC using O3 as an oxidant and tri-methyl-aluminum...

Authors: Peter Deák, T. Hornos, Christoph Thill, Jan Knaup, Adam Gali, Thomas Frauenheim

Abstract: Preliminary results of a systematic theoretical study on the reactions of NO with a model 4H-SiC/SiO2 interface are presented. We show,...

Authors: Filippo Giannazzo, Fabrizio Roccaforte, S.F. Liotta, Vito Raineri

Abstract: We present a novel approach based on conductive atomic force microscopy (c-AFM) for nano-scale mapping of the Schottky barrier height (SBH)...


Showing 121 to 130 of 248 Paper Titles