Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/www.scientific.net/MSF.556-557

Paper Title Page

Authors: John Hennessy, Tom Ryan

Abstract: Micro-photoluminescence can be used to image electrically active structural defects in SiC. Under suitable excitation conditions it is...

383
Authors: Xing Fang Liu, Guo Sheng Sun, Jin Min Li, Yong Mei Zhao, J.Y. Li, L. Wang, Wan Shun Zhao, M.C. Luo, Yi Ping Zeng

Abstract: Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer were investigated by micro-raman scattering...

387
Authors: Uwe Gerstmann, E. Rauls, Siegmund Greulich-Weber, Ekaterina N. Kalabukhova, D.V. Savchenko, Andreas Pöppl, Francesco Mauri

Abstract: The microscopic origin of the Nx EPR-lines observed in heavily nitrogen doped 4H-SiC and 6H-SiC is discussed with the help of EPR...

391
Authors: K. Neimontas, Kęstutis Jarašiūnas, Maher Soueidan, Gabriel Ferro, Yves Monteil

Abstract: We applied picosecond dynamic grating technique for studies of carrier dynamics in ntype DPB(double positioning boundary)-free 3C-SiC (111)...

395
Authors: V.S. Kiselov, Ekaterina N. Kalabukhova, S.N. Lukin, A.A. Sitnikov, V.A. Yukhymchyk, Rositza Yakimova

Abstract: The objective of the present work is to examine the preparation and characterization of the SiC sponge obtained by direct synthesis of high...

399
Authors: Nada Habka, Veronique Soulière, Jean Marie Bluet, Maher Soueidan, Gabriel Ferro, Yves Monteil

Abstract: We report an optical investigation of cubic Silicon Carbide (3C-SiC) layers grown on 6H-SiC substrates by Chemical Vapour Deposition and...

403
Authors: Jacques Botsoa, Jean Marie Bluet, Vladimir Lysenko, Olivier Marty, Daniel Barbier, Gérard Guillot

Abstract: Photoluminescence properties of a freestanding nanoporous SiC layer obtained from bulk 6H-SiC substrate as well as SiC nanopowder...

407
Authors: Bharat Krishnan, Sashi Kumar Chanda, Yaroslav Koshka

Abstract: The room-temperature photoluminescence (RTPL) was investigated in commercial nitrogen-doped 4H-SiC substrates. In a typical RTPL spectrum...

411
Authors: Maynard J. Clouter, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke, Y. Shishkin, Stephen E. Saddow

Abstract: A lightly doped n-type homo-epitaxial layer was grown by CVD onto a heavily doped n-type 4H-SiC substrate for which half of the surface had...

415
Authors: Koichi Nishikawa, Yusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato, Hiroaki Iwakuro

Abstract: With development of very-low-micropipe-density substrate, reduction of other device killer defects becomes important for large size power...

419

Showing 91 to 100 of 248 Paper Titles