Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/www.scientific.net/MSF.556-557

Paper Title Page

Authors: Peter J. Wellmann, Philip Hens, Sakwe Aloysius Sakwe, Desirée Queren, Ralf Müller, Karsten Durst, Matthias Göken

Abstract: The origin of dislocation evolution during SiC crystal growth is usually related to lattice relaxation mechanisms caused by thermal stress....

259
Authors: Sakwe Aloysius Sakwe, Peter J. Wellmann

Abstract: In this paper we report, based on analysis of dislocation statistics, on the influence of growth temperature on the nucleation, propagation...

263
Authors: Katja Konias, Rainer Hock, Matthias Stockmeier, Peter J. Wellmann, M. Miller, S. Ossege, Andreas Magerl
267
Authors: Hidekazu Tsuchida, Isaho Kamata, Masahiro Nagano, L. Storasta, Toshiyuki Miyanagi

Abstract: Synchrotron reflection X-ray topography and KOH etching were applied to investigate the effects of the ion implantation/annealing process...

271
Authors: Norihiro Hoshino, Michio Tajima, Toshihiko Hayashi, Taro Nishiguchi, Hiroyuki Kinoshita, Hiromu Shiomi

Abstract: The advantage of room-temperature photoluminescence (PL) mapping was demonstrated for nondestructive detection of stacking faults (SFs) in...

275
Authors: G. Savini, A.A. El Barbary, M.I. Heggie, Sven Öberg

Abstract: First-principles calculations are used to investigate the partial dislocations in 4H-SiC. We have shown that the Peierls barriers are...

279
Authors: Tomoaki Hatayama, S. Takenami, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki

Abstract: By the use of Cl2-O2 thermal etching method, the etching rates of 4H-SiC were reached to about 1μm/h for Si and 40μm/h for C face at 950oC....

283
Authors: Kenneth A. Jones, T.S. Zheleva, R.D. Vispute, Shiva S. Hullavarad

Abstract: Using TEM we show that defective regions are formed in SiC by ion implantation, and that some of the regions grow at the expense of others....

287
Authors: James D. Oliver

Abstract: Device quality SiC wafers are extremely expensive and available from only a limited number of vendors. This has limited the ability of...

291
Authors: Robert E. Stahlbush, Kendrick X. Liu, Q. Zhang, Joseph J. Sumakeris

Abstract: A non-destructive technique to image the dislocations and other extended defects in SiC epitaxial layers has been developed. Basal plane...

295

Showing 61 to 70 of 248 Paper Titles