Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Alexander A. Lebedev, V.V. Zelenin, Pavel L. Abramov, Elena V. Bogdanova, Sergey P. Lebedev, D.K. Nel'son, Boris S. Razbirin, M.P. Scheglov, Alla S. Tregubova, Mikael Syväjärvi, Rositza Yakimova

Abstract: 3C-SiC epitaxial layers with a thickness of up to 100 μm and area of ~0.3-0.5 cm2 have been grown by sublimation epitaxy on hexagonal...

Authors: Guo Sheng Sun, Jin Ning, Xing Fang Liu, Yong Mei Zhao, Jia Ye Li, Lei Wang, Wan Shun Zhao, Liang Wang

Abstract: 3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper...

Authors: Hideki Shimizu, Akira Kato

Abstract: The effects of C3H8 on the microstructures of the films on Si (111) have been investigated by changing the concentration of C3H8 from 0.5%...

Authors: Maher Soueidan, Olivier Kim-Hak, Gabriel Ferro, Patrick Chaudouët, Didier Chaussende, Bilal Nsouli, Yves Monteil

Abstract: We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and...

Authors: M. Reyes, Y. Shishkin, S. Harvey, Stephen E. Saddow

Abstract: Growth rates from 10 to 38 μm/h of single crystal 3C-SiC on planar Si (001) substrates have been obtained in a low-pressure horizontal...

Authors: Mikael Syväjärvi, Nut Sritirawisarn, Rositza Yakimova

Abstract: The effect of initial growth condition of 3C-SiC growth on the C-face of 6H-SiC has been studied in sublimation epitaxy. The initial...

Authors: Laurence Latu-Romain, Didier Chaussende, L. Rapenne, Michel Pons, Roland Madar

Abstract: The development of 3C-SiC crystals from <0001> oriented hexagonal seed has always suffered from the systematic twinning which appears...

Authors: Jörg Pezoldt, Christian Förster, Thomas Stauden, Volker Cimalla, Francisco M. Morales, Charbel Zgheib, Pierre M. Masri, Oliver Ambacher

Abstract: The influence of the growth conditions on the 3C-SiC layer quality in terms of crystallinity, morphology and residual strain was...

Authors: Marcin Zielinski, Marc Portail, Hervé Peyre, Thierry Chassagne, S. Ndiaye, Bernard Boyer, André Leycuras, Jean Camassel

Abstract: We have investigated the influence of several growth parameters on the incorporation of doping species in the case of 3C-SiC layers grown...

Authors: K.W. Kirchner, Kenneth A. Jones, Michael A. Derenge, Michael Dudley, Adrian R. Powell

Abstract: Double and triple crystal rocking curve and peak position maps are constructed for a 4HSiC wafer for the symmetric (0 0 0 8) reflection in...


Showing 41 to 50 of 248 Paper Titles