Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén

Abstract: We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The...

Authors: James D. Oliver, Brian H. Ponczak

Abstract: A series of designed experiments have been conducted over a period of years in a multiwafer, planetary rotation, epitaxial reactor to...

Authors: Y. Shishkin, Rachael L. Myers-Ward, Stephen E. Saddow, Alexander Galyukov, A.N. Vorob'ev, D. Brovin, D. Bazarevskiy, R.A. Talalaev, Yuri N. Makarov

Abstract: A fully-comprehensive three-dimensional simulation of a CVD epitaxial growth process has been undertaken and is reported here. Based on a...

Authors: Maher Soueidan, Gabriel Ferro, Bilal Nsouli, Nada Habka, Veronique Soulière, Ghassan Younes, Khaled Zahraman, Jean Marie Bluet, Yves Monteil

Abstract: Vapor-Liquid-Solid was used for growing boron doped homoepitaxial SiC layers on 4HSiC( 0001) 8°off substrates. Si-based melts were fed by...

Authors: Mike F. MacMillan, Mark J. Loboda, Jian Wei Wan, Gil Chung, E.P. Carlson, Michael J. Spaulding, D. Deese

Abstract: Gas phase etching of 4H SiC n+ substrates was performed utilizing chlorine containing etch chemistries in a hot wall CVD system. Carbon and...

Authors: Y. Shishkin, Shailaja P. Rao, Olof Kordina, I. Agafonov, Andrei A. Maltsev, Jawad ul Hassan, Anne Henry, Catherine Moisson, Stephen E. Saddow

Abstract: Crystal growth of 6H-SiC in two non-basal directions is reported. The two explored surfaces are the {1-103} plane, named qC-face, and the...

Authors: Joseph J. Sumakeris, Brett A. Hull, Michael J. O'Loughlin, Marek Skowronski, Vijay Balakrishna

Abstract: We detail a comprehensive approach to preparing epiwafers for bipolar SiC power devices which entails etching the substrate, growing a...

Authors: Masahiko Ito, Hidekazu Tsuchida, Isaho Kamata, L. Storasta

Abstract: A vertical hot-wall type reactor, with a unique structure designed for controlling both gas flow behavior and thermal gradient (T/mm) on...

Authors: Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai

Abstract: We have investigated the influence of in-situ H2 etching on the surface morphology of the 4H-SiC substrate prior to homoepitaxial growth....

Authors: René A. Stein, Bernd Thomas, Christian Hecht

Abstract: Epitaxial layers have been grown on the (0001) C-face of 2- and 3-inch 4H-SiC wafers. Growth conditions like temperature, pressure, and...


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