Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Huang De Lin, Galyna Melnychuk, Jeffery L. Wyatt, Yaroslav Koshka

Abstract: Low-temperature epitaxial growth of 4H-SiC with CH3Cl carbon precursor was further developed. In-situ doping with nitrogen and aluminum was...

Authors: Lucia Calcagno, Gaetano Izzo, Grazia Litrico, G. Galvagno, A. Firrincieli, Salvatore Di Franco, Marco Mauceri, Stefano Leone, Giuseppe Pistone, Giuseppe Condorelli, F. Portuese, Giuseppe Abbondanza, Gaetano Foti, Francesco La Via

Abstract: High growth rate of 4H-SiC epitaxial layers can be reached with the introduction of HCl in the deposition chamber. The effect of the Cl/Si...

Authors: L.B. Rowland, Greg Dunne, Jody Fronheiser, Stanislav I. Soloviev

Abstract: Cold-wall vapor phase epitaxy was utilized to grow uniform 4H-SiC layers with abrupt doping interfaces on 4o off-axis substrates....

Authors: Jian Wei Wan, Mark J. Loboda, Mike F. MacMillan, Gil Chung, E.P. Carlson, V.M. Torres

Abstract: A SiC epitaxy process based on chlorosilane/propane chemistry has been successfully transferred from a single-wafer R&D system to a...

Authors: Bharat Krishnan, Hrishikesh Das, Huang De Lin, Yaroslav Koshka

Abstract: Previously reported CVD epitaxial growth of 4H-SiC at temperatures down to and below 13000C using CH3Cl precursor offered a promise of new...

Authors: Chi Kwon Park, Gi Sub Lee, Ju Young Lee, Myung Ok Kyun, Won Jae Lee, Byoung Chul Shin, Shigehiro Nishino

Abstract: A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power...

Authors: Francesco La Via, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, G. Galvagno, Salvatore Di Franco, Lucia Calcagno, Gaetano Foti, Gian Luca Valente, Danilo Crippa

Abstract: The growth rate of 4H-SiC epi layers has been increased by a factor 19 (up to 112 μm/h) with respect to the standard process with the...

Authors: Alexander A. Lebedev

Abstract: In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes)....

Authors: A.V. Vasin, Yukari Ishikawa, Noriyoshi Shibata, Jarno Salonen, Vesa Pekka Lehto

Abstract: In the present work, the carbonization of porous silicon for the subsequent 3C-SiC growth has been systematically studied. The effect of...

Authors: Andrea Severino, Corrado Bongiorno, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, Gaetano Foti, Francesco La Via

Abstract: 3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to...


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