Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Matthias Stockmeier, Rainer Hock, Octavian Filip, Boris M. Epelbaum, Albrecht Winnacker, Andreas Magerl
Authors: Kevin M. Speer, David J. Spry, Andrew J. Trunek, Philip G. Neudeck, M.A. Crimp, J.T. Hile, C. Burda, P. Pirouz

Abstract: pn diodes have recently been fabricated from 3C-SiC material heteroepitaxially grown atop on-axis 4H-SiC mesa substrate arrays [1,2]. Using...

Authors: I. Brazil, Patrick J. McNally, N. Ren, L. O'Reilly, A. Danilewsky, T.O. Tuomi, A. Lankinen, A. Säynätjaki, R. Simon, Stanislav I. Soloviev, L.B. Rowland, Peter M. Sandvik

Abstract: We present herein a first comparative analysis of the quality of 50 mm and 75 mm diameter SiC wafers, purchased directly from vendors...

Authors: Yi Chen, Govindhan Dhanaraj, William M. Vetter, Rong Hui Ma, Michael Dudley

Abstract: The interactions between basal plane dislocations (BPDs) and threading screw and edge dislocations (TSDs and TEDs) in hexagonal SiC have...

Authors: D. Kurt Gaskill, Michael A. Mastro, Kok Keong Lew, Brenda L. VanMil, Rachael L. Myers-Ward, Ronald T. Holm, Charles R. Eddy

Abstract: A set of three 4H-SiC wafers with manufacturer specified micropipe density of 0-5 cm-2 were characterized by x-ray diffraction (XRD) maps...

Authors: Tomohisa Kato, Tomonori Miura, Keisuke Wada, Eiji Hozomi, Hiroyoshi Taniguchi, Shin Ichi Nishizawa, Kazuo Arai

Abstract: In this study, we report defect analysis in 4H-SiC crystals of high nitrogen doping grown by sublimation method, and we discuss key points...

Authors: Sakwe Aloysius Sakwe, Yeon Suk Jang, Peter J. Wellmann

Abstract: Wet chemical etching using molten KOH is the most frequently applied method to reveal structural defects in SiC. Until now etching kinetics...

Authors: Ping Wu, Ejiro Emorhokpor, Murugesu Yoganathan, Thomas Kerr, Jie Zhang, Esteban Romano, Ilya Zwieback

Abstract: Several morphological defects in 4H SiC epitaxial wafers, including Comets and Triangles, may significantly impact on the yield and...

Authors: R. Ishii, Toshiyuki Miyanagi, Isaho Kamata, Hidekazu Tsuchida, Koji Nakayama, Yoshitaka Sugawara

Abstract: We investigated the location of the nuclei of Shockley-type stacking faults (SSFs) in the 4H-SiC pin diodes, using electroluminescence (EL)...

Authors: Igor Matko, Bernard Chenevier, Jean Marie Bluet, Roland Madar, Fabrice Letertre, Wahib Saikaly

Abstract: QuaSiC TM substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut TM...


Showing 51 to 60 of 248 Paper Titles