Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Tom Ryan, John Hennessy, Colin Harrison, Shou Yin Wang, Gyles Webster, Akihiko Majima

Abstract: The commercial availability of SiC-based devices has been limited by a number of factors including wafer supply, cost, wafer size and...

Authors: Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Akihiro Yauchi

Abstract: We carried out the characterization of the crystallinity of the solution growth self-standing silicon carbide (SiC) crystals, which were...

Authors: Gerhard Pensl, Frank Schmid, Sergey A. Reshanov, Heiko B. Weber, M. Bockstedte, Alexander Mattausch, Oleg Pankratov, Takeshi Ohshima, Hisayoshi Itoh

Abstract: Nitrogen (N) donors in SiC are partially deactivated either by Si+-/N+-co-implantation or by irradiation with electrons of 200 keV energy...

Authors: John W. Steeds

Abstract: Use of a transmission electron microscope to irradiate silicon carbide samples has been demonstrated as a useful additional...

Authors: W. Sullivan, John W. Steeds

Abstract: The high-temperature persistent PL defect known as DII is commented on within this study, seen for the first time in low-energy electron...

Authors: Gil Chung, Mark J. Loboda, Mike F. MacMillan, Jian Wei Wan, Darren M. Hansen

Abstract: Excess carrier lifetimes in 4H SiC epitaxial wafers were characterized by microwave photoconductive decay (o/PCD). The measured decay...

Authors: Matthias Wagner, E. Mustafa, S. Hahn, Mikael Syväjärvi, Rositza Yakimova, S. Jang, Sakwe Aloysius Sakwe, Peter J. Wellmann
Authors: Katsunori Danno, Tsunenobu Kimoto

Abstract: The authors have investigated deep levels in electron-irradiated n- and p-type 4H-SiC epilayers by deep level transient spectroscopy...

Authors: Satoshi Murata, Yoshihiro Nakamura, Tomohiko Maeda, Yoko Shibata, Mina Ikuta, Masaaki Sugiura, Shugo Nitta, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Masahiro Yoshimoto, Tomoaki Furusho, Hiroyuki Kinoshita

Abstract: The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated....

Authors: W.S. Loh, C. Mark Johnson, J.S. Ng, Peter M. Sandvik, Steve Arthur, Stanislav I. Soloviev, J.P.R. David

Abstract: Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC...


Showing 71 to 80 of 248 Paper Titles