Silicon Carbide and Related Materials 2006

Volumes 556-557

doi: 10.4028/

Paper Title Page

Authors: Nguyen Tien Son, Patrick Carlsson, Björn Magnusson, Erik Janzén

Abstract: Vacancies, divacancies and carbon vacancy-carbon antisite pairs are found by electron paramagnetic resonance (EPR) to be dominant defects...

Authors: Uwe Gerstmann, Siegmund Greulich-Weber, E. Rauls, Johann Martin Spaeth, Ekaterina N. Kalabukhova, E.N. Mokhov, Francesco Mauri

Abstract: Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy...

Authors: Mary Ellen Zvanut, Hun Jae Chung, A.Y. Polyakov, Marek Skowronski

Abstract: Halide chemical vapor deposition (HCVD) allows for rapid growth while maintaining the purity afforded by a CVD process. While several...

Authors: Hervé Peyre, Nada Habka, Veronique Soulière, Maher Soueidan, Gabriel Ferro, Yves Monteil, Jean Camassel

Abstract: We report the results of a SIMS and micro-Raman investigation performed on cubic (3C) SiC crystals grown on hexagonal SiC seeds using a...

Authors: P. Soukiassian, F. Amy, Christian Brylinski, T.O. Mentes, A. Locatelli

Abstract: Atomic structure and morphology of 6H-SiC(0001) and 3C-SiC(100) surfaces are studied by scanning tunneling microscopy (STM), synchrotron...

Authors: Einar Ö. Sveinbjörnsson, Fredrik Allerstam, H.Ö. Ólafsson, G. Gudjónsson, D. Dochev, T. Rödle, R. Jos

Abstract: We demonstrate how sodium enhanced oxidation of Si face 4H-SiC results in removal of near-interface traps at the SiO2/4H-SiC interface....

Authors: Alexander Mattausch, T. Dannecker, Oleg Pankratov

Abstract: Using density functional theory, we investigate the 6H-SiC{0001} surfaces in the unreconstructed 1 × 1 and the H-passivated configuration....

Authors: R. Ramakrishna Rao, S. Balaji, Kevin Matocha, Vinayak Tilak

Abstract: In 4H silicon carbide MOSFETs, threshold voltage varies with temperature. It is believed that this is caused by trapping of inversion...

Authors: Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Dario Salinas

Abstract: The nano-characterization of thermal oxides grown on 4H-SiC is for the first time presented and analysed to derive its reliability. The...

Authors: Kin Kiong Lee, Gerhard Pensl, Maher Soueidan, Gabriel Ferro

Abstract: This paper studies the electronic properties of MOS capacitors fabricated on double positioning boundary free 3C-SiC/6H-SiC where the...


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