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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70

Solid State Phenomena Vols. 69-70

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70

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Paper Title Page

Relaxation of Misfit Induced Strain in Si-Based Heterostructures

Authors: S.H. Christiansen, Horst P. Strunk, H. Wawra, M. Becker, M. Albrecht

93

Materials Quality and Materials Cost - Are they on a Collision Course?

Authors: K.V. Ravi

103

Defect Engineering in the Development of Advanced Silicon Crystals and Wafers

Authors: Jan Vanhellemont

111

200 GHz Potential of Si-Based Devices

Authors: Uwe König

121

Silicon Materials Engineering for the Next Millennium

Authors: Lionel C. Kimerling

131

Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers

Authors: Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini, Sergio Pizzini, E. Susi

143

Equilibrium Critical Thickness of Strained Buried SiGe Layers

Authors: A. Fischer, G. Kissinger, Hans Richter, P. Zaumseil

149

Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers

Authors: Eugenijus Gaubas, Eddy Simoen, Cor Claeys, A. Poyai

155

Defect Control in Nitrogen Doped Czochralski Silicon Crystals

Authors: Atsushi Ikari, Katsuhiko Nakai, Y. Tachikawa, H. Deai, Y. Hideki, Yasumitsu Ohta, Naoya Masahashi, S. Hayashi, T. Hoshino, Wataru Ohashi

161

Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures

Authors: S. Kar, P. Zaumseil

167

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