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Gettering and Defect Engineering in Semiconductor Technology X

Solid State Phenomena Volumes 95 - 96

• Papers
• Abstracts

• p217 The Effect of Grain Orientations on the Efficiency of Multicrystalline Solar Cells   [ 2 M ]
  Authors: Paul Chr. Hjemås, Otto Lohne, Andrew Wandera, Harsharn Singh Tathgar
• p223 Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells   [ 133 K ]
  Authors: Karsten Bothe, Rudolf Hezel, Jan Schmidt
• p229 Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon   [ 1 M ]
  Authors: Stephan Riepe, G. Stokkan, T. Kieliba, W. Warta
• p235 Influence of High-Temperature Processes on Multicrystalline Silicon   [ 304 K ]
  Authors: Oliver Schultz, Stephan Riepe, Stephan W. Glunz
• p243 Growth of Si_1-x-yGe_xC_y Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene   [ 257 K ]
  Authors: You Dou Zheng, Ning Jiang, Ping Han, Shu Lin Gu, Shun Ming Zhu, Rou Lian Jiang, Yi Shi, Wan Fang Lu, Bo Shen, Rong Zhang
• p249 Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors   [ 888 K ]
  Authors: D. Wolansky, G.G. Fischer, D. Knoll, D. Bolze, Bernd Tillack, P. Schley, Y. Yamamoto
• p255 Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)   [ 307 K ]
  Authors: Jin Zhong Yu, Cheng Li, Bu Wen Cheng, Qi Ming Wang
• p263 Extended Defects in Silicon: an Old and New Story   [ 865 K ]
  Authors: Jan Vanhellemont, Olivier De Gryse, Paul Clauws
• p273 Luminescence of Dislocations and Oxide Precipitates in Si   [ 719 K ]
  Authors: Sergio Pizzini, E. Leoni, Simona Binetti, Maurizio Acciarri, Alessia Le Donne, Bernard Pichaud
• p283 Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes   [ 3 M ]
  Authors: N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, V.I. Vdovin
• p289 Luminescence of Silicon Implanted with Phosphorus   [ 932 K ]
  Authors: Tzanimir Arguirov, Martin Kittler, Winfried Seifert, D. Bolze, K.-E. Ehwald, Peter Formanek, Jürgen Reif
• p297 Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices   [ 735 K ]
  Authors: Frédéric Cayrel, Daniel Alquier, Laurent Ventura, Leo Vincent, F. Roqueta, Christiane Dubois, Robert Jérisian
• p307 Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment   [ 1 M ]
  Authors: C.L. Liu, E. Ntsoenzok, Marie France Barthe, P. Desgardin, S. Ashok, A. Vengurlekar, Daniel Alquier, M.O. Ruault
• p313 Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium   [ 751 K ]
  Authors: Andrzej Misiuk, Adam Barcz, Jacek Ratajczak, Jadwiga Bak-Misiuk
• p319 Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures   [ 245 K ]
  Authors: Marie-Laure David, Marie France Beaufort, Jean François Barbot