Mechanical and Aerospace Engineering, ICMAE2011

Volumes 110-116

doi: 10.4028/www.scientific.net/AMM.110-116

Paper Title Page

Authors: Tejas R. Naik, Veena R. Naik, Nisha P. Sarwade

Abstract: Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk,...

5380
Authors: K.R. Ghadge, P.P. Mone

Abstract: It is not possible to eliminate all the mistakes people make. People are not mistake proofed by their nature. But organization can avoid...

5384
Authors: K.S. Sim, K. Y. Low, C. P. Tso, H. Y. Ting, C.T. Lee

Abstract: This project aims to design and develop a working prototype of a walking assist device. Spring and brushed DC motors are adopted to assist...

5390
Authors: Naqvi Najam Abbas, Han Xiao, Li Yan Jun, Muhammad Raza

Abstract: This research article presents the architecture analysis and design of Attitude determination and control subsystem (ADCS) of the...

5397
Authors: Zhi Wei Zhu, Mei Chen Liu, Xiao Qin Zhou

Abstract: Three dimensional molecular dynamics simulation on the nanocutting of monocrystalline silicon is carried out to investigate the material...

5405
Authors: Lu Cao, Wei Wei Yang, Xiao Qian Chen, Yi Yong Huang

Abstract: — An extended predictive filter is presented for attitude determination of Micro-satellite based on the basic theory of predictive filter....

5413
Authors: Suprapto Widodo, Nurman Ismail

Abstract: This paper present about solar energy electric with the capacity 4400voltampere, 3x220volts, 50hertzs. This capacity is assumed enough for...

5420
Authors: Adnan I. Al Rabea, Mahmud S. Alkoffash, Feras Almatarneh, Basim Alhadidi

Abstract: On the basis of theoretical and experimental researches the new structures and formal methods of compositional micro program control units...

5429
Authors: Subrat K. Barik, Sudipta K. Bera

Abstract: The polycrystalline sample of (BiLi) 1/2 (FeV) 1/2O3 was prepared by a high-temperature solid-state reaction technique. A preliminary X-ray...

5437
Authors: Li Jun Xu, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, Jian Li Ma

Abstract: As the size of MOS device scaled down to sub 100nm, the direct tunneling current of gate oxide increases more and more. Using silicon...

5442

Showing 801 to 810 of 820 Paper Titles