Mechanical and Aerospace Engineering, ICMAE2011

Volumes 110-116

doi: 10.4028/

Paper Title Page

Authors: Tejas R. Naik, Veena R. Naik, Nisha P. Sarwade

Abstract: Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk,...

Authors: K.R. Ghadge, P.P. Mone

Abstract: It is not possible to eliminate all the mistakes people make. People are not mistake proofed by their nature. But organization can avoid...

Authors: K.S. Sim, K. Y. Low, C. P. Tso, H. Y. Ting, C.T. Lee

Abstract: This project aims to design and develop a working prototype of a walking assist device. Spring and brushed DC motors are adopted to assist...

Authors: Naqvi Najam Abbas, Han Xiao, Li Yan Jun, Muhammad Raza

Abstract: This research article presents the architecture analysis and design of Attitude determination and control subsystem (ADCS) of the...

Authors: Zhi Wei Zhu, Mei Chen Liu, Xiao Qin Zhou

Abstract: Three dimensional molecular dynamics simulation on the nanocutting of monocrystalline silicon is carried out to investigate the material...

Authors: Lu Cao, Wei Wei Yang, Xiao Qian Chen, Yi Yong Huang

Abstract: — An extended predictive filter is presented for attitude determination of Micro-satellite based on the basic theory of predictive filter....

Authors: Suprapto Widodo, Nurman Ismail

Abstract: This paper present about solar energy electric with the capacity 4400voltampere, 3x220volts, 50hertzs. This capacity is assumed enough for...

Authors: Adnan I. Al Rabea, Mahmud S. Alkoffash, Feras Almatarneh, Basim Alhadidi

Abstract: On the basis of theoretical and experimental researches the new structures and formal methods of compositional micro program control units...

Authors: Subrat K. Barik, Sudipta K. Bera

Abstract: The polycrystalline sample of (BiLi) 1/2 (FeV) 1/2O3 was prepared by a high-temperature solid-state reaction technique. A preliminary X-ray...

Authors: Li Jun Xu, He Ming Zhang, Hui Yong Hu, Xiao Bo Xu, Jian Li Ma

Abstract: As the size of MOS device scaled down to sub 100nm, the direct tunneling current of gate oxide increases more and more. Using silicon...


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