Paper Title
Authors: A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich
Abstract:The radiation defects in 10 Ω⋅cm p-type and 4.5 Ω⋅cm n-type Cz Si were created at depth of 0.8-1 µm using 100 keV 2⋅1016 at/cm2 hydrogen...
Authors: Sandrine Brochard, Julien Godet, Laurent Pizzagalli, Pierre Beauchamp, José Soler
Abstract:Atomistic simulations using both semi-empirical potential and first principles calculation have been performed to study the initiation of...
Authors: A.A. Groza, M.I. Starchik, P.G. Litovchenko, A.P. Litovchenko, D. Bisello, R. Rando, P. Giubilato, A. Candelori, V. Khomenkov
Authors: Charalamos A. Londos, G.D. Antonaras, M.S. Potsidi, Andrzej Misiuk, Valentin V. Emtsev
Abstract:Cz-grown, carbon-doped silicon samples were irradiated by fast neutrons. We investigated the annealing behaviour of oxygen-related defects,...
Authors: Yue Ma, Yue Long Huang, Reinhart Job, Wolfgang Düngen, Wolfgang R. Fahrner
Abstract:Boron doped [100]-oriented Cz Si wafers are hydrogenated with a plasma enhanced chemical vapor deposition setup at a substrate temperature of...
Authors: L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, Stanislav B. Lastovskii, N.M. Kazuchits, M.S. Rusetsky, Eckhart Fretwurst, G. Lindström, Michael Moll, Ioana Pintilie, N.I. Zamiatin
Abstract:The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been...
Authors: L.I. Murin, J. Lennart Lindström, Vladimir P. Markevich, I.F. Medvedeva, Vitor J.B. Torres, J. Coutinho, R. Jones, Patrick R. Briddon
Abstract:We report on a combined experimental and theoretical study of the metastable form of the vacancy-dioxygen defect in Si labeled VO∗ 2....
Authors: Yurii M. Pokotilo, Alla N. Petukh, Valentin V. Litvinov, B.G. Tsvirko
Abstract:The transformation of the shallow hydrogen-related donors, which have been formed in the silicon samples by irradiation of the low energy...
Authors: Anis M. Saad, Alex L. Pushkarchuk, A.V. Mazanik, A.K. Fedotov, S.A. Kuten
Abstract:Transformation of the “core” atomic structure and electronic states of the tilt Σ5 θ = 37° [001]/(130) grain boundary in poly-Si due to...
Authors: Eugene B. Yakimov
Abstract:Depth profiles of Au in nitrogen-doped FZ p-Si have been studied by the DLTS after diffusion at 680 - 730°C. It was shown that the Au depth...
Showing 31 to 40 of 129 Paper Titles