Gettering and Defect Engineering in Semiconductor Technology XI

Volumes 108-109

doi: 10.4028/

Paper Title Page

Authors: A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, A.V. Mazanik, N.V. Frantskevich

Abstract: The radiation defects in 10 Ω⋅cm p-type and 4.5 Ω⋅cm n-type Cz Si were created at depth of 0.8-1 µm using 100 keV 2⋅1016 at/cm2 hydrogen...

Authors: Sandrine Brochard, Julien Godet, Laurent Pizzagalli, Pierre Beauchamp, José Soler

Abstract: Atomistic simulations using both semi-empirical potential and first principles calculation have been performed to study the initiation of...

Authors: A.A. Groza, M.I. Starchik, P.G. Litovchenko, A.P. Litovchenko, D. Bisello, R. Rando, P. Giubilato, A. Candelori, V. Khomenkov
Authors: Charalamos A. Londos, G.D. Antonaras, M.S. Potsidi, Andrzej Misiuk, Valentin V. Emtsev

Abstract: Cz-grown, carbon-doped silicon samples were irradiated by fast neutrons. We investigated the annealing behaviour of oxygen-related defects,...

Authors: Yue Ma, Yue Long Huang, Reinhart Job, Wolfgang Düngen, Wolfgang R. Fahrner

Abstract: Boron doped [100]-oriented Cz Si wafers are hydrogenated with a plasma enhanced chemical vapor deposition setup at a substrate temperature...

Authors: L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, Stanislav B. Lastovskii, N.M. Kazuchits, M.S. Rusetsky, Eckhart Fretwurst, G. Lindström, Michael Moll, Ioana Pintilie, N.I. Zamiatin

Abstract: The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been...

Authors: L.I. Murin, J. Lennart Lindström, Vladimir P. Markevich, I.F. Medvedeva, Vitor J.B. Torres, J. Coutinho, R. Jones, Patrick R. Briddon

Abstract: We report on a combined experimental and theoretical study of the metastable form of the vacancy-dioxygen defect in Si labeled VO∗ 2....

Authors: Yurii M. Pokotilo, Alla N. Petukh, Valentin V. Litvinov, B.G. Tsvirko

Abstract: The transformation of the shallow hydrogen-related donors, which have been formed in the silicon samples by irradiation of the low energy...

Authors: Anis M. Saad, Alex L. Pushkarchuk, A.V. Mazanik, A.K. Fedotov, S.A. Kuten

Abstract: Transformation of the “core” atomic structure and electronic states of the tilt Σ5 θ = 37° [001]/(130) grain boundary in poly-Si due to...

Authors: Eugene B. Yakimov

Abstract: Depth profiles of Au in nitrogen-doped FZ p-Si have been studied by the DLTS after diffusion at 680 - 730°C. It was shown that the Au depth...


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