Gettering and Defect Engineering in Semiconductor Technology XI

Volumes 108-109

doi: 10.4028/

Paper Title Page

Authors: V.A. Borodin, M.O. Ruault, Mariya G. Ganchenkova, F. Fortuna

Abstract: The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio...

Authors: John D. Murphy, A. Giannattasio, Charles R. Alpass, Semih Senkader, Robert J. Falster, Peter R. Wilshaw

Abstract: Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 x 1015cm-3 and 3...

Authors: P.D. Edmondson, S.E. Donnelly, R.C. Birtcher

Abstract: In this paper we present a detailed study in which the formation, by heavy ion impact, and thermal recrystallisation of individual amorphous...

Authors: O.F. Vyvenko, Martin Kittler, Winfried Seifert

Abstract: Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC),...

Authors: V.D. Akhmetov, Andrzej Misiuk, Hans Richter

Abstract: The evolution of nitrogen related infrared vibrational spectra of CZ-Si implanted with nitrogen, with doses 1017 ion/cm2 and 1018 ion/cm2,...

Authors: M. Badylevich, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan

Abstract: We investigated the effect of magnetic field on the unlocking stress for dislocations in Cz-Si, measured at 600oC, depending on the thermal...

Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Barbara Surma, Artem Shalimov, Charalamos A. Londos

Abstract: Oxygen precipitation and creation of defects in Czochralski grown silicon with interstitial oxygen concentration 9.4·1017 cm-3, subjected to...

Authors: A. Carvalho, R. Jones, J. Coutinho, Vitor J.B. Torres, Patrick R. Briddon

Abstract: We report on the energetics, electrical and optical activity of small self-interstitial (I3 and I4) clusters in Si, found from ab-initio...

Authors: Valentin V. Emtsev, Boris A. Andreev, Gagik A. Oganesyan, D.I. Kryzhkov, Andrzej Misiuk, Charalamos A. Londos, M.S. Potsidi

Abstract: Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference...


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