Paper Title
Authors: V.A. Borodin, M.O. Ruault, Mariya G. Ganchenkova, F. Fortuna
Abstract:The paper presents the results of experimental in-situ observations of cobalt disilicide nucleation in Co+ implanted silicon and ab initio...
Authors: John D. Murphy, A. Giannattasio, Charles R. Alpass, Semih Senkader, Robert J. Falster, Peter R. Wilshaw
Abstract:Dislocation locking by nitrogen impurities has been investigated in float-zone silicon with nitrogen concentrations of 2.2 x 1015cm-3 and 3 x...
Authors: P.D. Edmondson, S.E. Donnelly, R.C. Birtcher
Abstract:In this paper we present a detailed study in which the formation, by heavy ion impact, and thermal recrystallisation of individual amorphous...
Authors: O.F. Vyvenko, Martin Kittler, Winfried Seifert
Abstract:Silicon samples doped with gallium and intentionally contaminated with iron have been studied by means of electron beam current (EBIC),...
Authors: V.D. Akhmetov, Andrzej Misiuk, Hans Richter
Abstract:The evolution of nitrogen related infrared vibrational spectra of CZ-Si implanted with nitrogen, with doses 1017 ion/cm2 and 1018 ion/cm2, at...
Authors: M. Badylevich, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan
Abstract:We investigated the effect of magnetic field on the unlocking stress for dislocations in Cz-Si, measured at 600oC, depending on the thermal...
Authors: Jadwiga Bak-Misiuk, Andrzej Misiuk, Barbara Surma, Artem Shalimov, Charalamos A. Londos
Abstract:Oxygen precipitation and creation of defects in Czochralski grown silicon with interstitial oxygen concentration 9.4·1017 cm-3, subjected to...
Authors: A. Carvalho, R. Jones, J. Coutinho, Vitor J.B. Torres, Patrick R. Briddon
Abstract:We report on the energetics, electrical and optical activity of small self-interstitial (I3 and I4) clusters in Si, found from ab-initio...
Authors: Valentin V. Emtsev, Boris A. Andreev, Gagik A. Oganesyan, D.I. Kryzhkov, Andrzej Misiuk, Charalamos A. Londos, M.S. Potsidi
Abstract:Effects of compressive stress on oxygen agglomeration processes in Czochralski grown silicon heat treated at T= 450OC, used as a reference...
Showing 21 to 30 of 129 Paper Titles