Paper Title
Authors: Hiroshi Yamada-Kaneta, K. Tanahashi
Abstract:We have investigated the effect of infrared laser irradiation on the oxygen precipitation in silicon crystals during the heat-treatments. The...
Authors: Vladimir P. Markevich, Anthony R. Peaker, L.I. Murin, Valentin V. Emtsev, Valentin V. Litvinov, Nikolay V. Abrosimov, L. Dobaczewski
Abstract:Deep states produced during γ irradiation of germanium have been compared with the defects produced by 1 and 3MeV silicon ion implantation....
Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, N.A. Tripachko, Mikhail G. Sosnin, A.V. Duvanskii, L.I. Murin, J. Lennart Lindström, Stanislav B. Lastovskii, L.F. Makarenko, Vladimir P. Markevich, Anthony R. Peaker
Abstract:The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means...
Authors: L.I. Murin, J. Lennart Lindström, Bengt Gunnar Svensson, Vladimir P. Markevich, Anthony R. Peaker, Charalamos A. Londos
Abstract:Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature...
Authors: Vladimir P. Markevich, L.I. Murin, Stanislav B. Lastovskii, I.F. Medvedeva, J. Lennart Lindström, Anthony R. Peaker, J. Coutinho, R. Jones, Vitor J.B. Torres, Sven Öberg, Patrick R. Briddon
Abstract:The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a...
Authors: O.F. Vyvenko, N.V. Bazlov, M.V. Trushin, A.A. Nadolinski, Michael Seibt, Wolfgang Schröter, George T. Hahn
Abstract:Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2...
Authors: Eddy Simoen, G. Eneman, Sheron Shamuilia, V. Simons, Eugenijus Gaubas, R. Delhougne, R. Loo, K. De Meyer, Cor Claeys
Abstract:The electrical activity of threading dislocations (TDs), occurring in a thin SiGe Strain Relaxed Buffer (SRB) layer has been investigated by...
Authors: H. Assaf, E. Ntsoenzok, M.O. Ruault, O. Kaïtasov
Abstract:We implanted 300keV Xenon in silicon oxide at doses ranging from 1x1016 to 5x1016/cm2. For the first time, we reported the formation and the...
Authors: N. Cherkashin, Martin J. Hÿtch, Fuccio Cristiano, A. Claverie
Abstract:In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of...
Showing 41 to 50 of 129 Paper Titles