Gettering and Defect Engineering in Semiconductor Technology XI

Volumes 108-109

doi: 10.4028/www.scientific.net/SSP.108-109

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Authors: Hiroshi Yamada-Kaneta, K. Tanahashi

Abstract: We have investigated the effect of infrared laser irradiation on the oxygen precipitation in silicon crystals during the heat-treatments....

245
Authors: Vladimir P. Markevich, Anthony R. Peaker, L.I. Murin, Valentin V. Emtsev, Valentin V. Litvinov, Nikolay V. Abrosimov, L. Dobaczewski

Abstract: Deep states produced during γ irradiation of germanium have been compared with the defects produced by 1 and 3MeV silicon ion implantation....

253
Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, N.A. Tripachko, Mikhail G. Sosnin, A.V. Duvanskii, L.I. Murin, J. Lennart Lindström, Stanislav B. Lastovskii, L.F. Makarenko, Vladimir P. Markevich, Anthony R. Peaker

Abstract: The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means...

261
Authors: L.I. Murin, J. Lennart Lindström, Bengt Gunnar Svensson, Vladimir P. Markevich, Anthony R. Peaker, Charalamos A. Londos

Abstract: Local vibrational mode (LVM) spectroscopy has been used to study the evolution of vacancy-oxygen-related defects (VOn) in the temperature...

267
Authors: Vladimir P. Markevich, L.I. Murin, Stanislav B. Lastovskii, I.F. Medvedeva, J. Lennart Lindström, Anthony R. Peaker, J. Coutinho, R. Jones, Vitor J.B. Torres, Sven Öberg, Patrick R. Briddon

Abstract: The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a...

273
Authors: O.F. Vyvenko, N.V. Bazlov, M.V. Trushin, A.A. Nadolinski, Michael Seibt, Wolfgang Schröter, George T. Hahn

Abstract: Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of...

279
Authors: Eddy Simoen, G. Eneman, Sheron Shamuilia, V. Simons, Eugenijus Gaubas, R. Delhougne, R. Loo, K. De Meyer, Cor Claeys

Abstract: The electrical activity of threading dislocations (TDs), occurring in a thin SiGe Strain Relaxed Buffer (SRB) layer has been investigated by...

285
Authors: H. Assaf, E. Ntsoenzok, M.O. Ruault, O. Kaïtasov

Abstract: We implanted 300keV Xenon in silicon oxide at doses ranging from 1x1016 to 5x1016/cm2. For the first time, we reported the formation and the...

291
Authors: N. Cherkashin, Martin J. Hÿtch, Fuccio Cristiano, A. Claverie

Abstract: In this work, we present a detailed structural characterization of the defects formed after 0.5 keV B+ implantation into Si to a dose of...

303

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