Gettering and Defect Engineering in Semiconductor Technology XI

Volumes 108-109

doi: 10.4028/www.scientific.net/SSP.108-109

Paper Title Page

Authors: Helene Bourdon, Claire Fenouillet-Béranger, Claire Gallon, Philippe Coronel, Damien Lenoble

Abstract: The fully depleted SOI devices present lateral isolation issues due to the shallow trench isolation (STI) process. We propose in this paper...

439
Authors: Y. Bogumilowicz, J.M. Hartmann, F. Laugier, G. Rolland, Thierry Billon

Abstract: We have focused in this paper on the impact of the growth rate and of the grading rate on the structural properties of Si0.8Ge0.2 virtual...

445
Authors: M. Imai, Y. Miyamura, D. Murata, A. Ogi

Abstract: Four types of SGOI (SiGe on Insulator) wafers were fabricated by the combination of SiGe epitaxial growth, SIMOX (Separation by Implanted...

451
Authors: Mariya G. Ganchenkova, V.A. Borodin, S. Nicolaysen, Risto M. Nieminen

Abstract: In this paper we study the effect of chemical environment and elastic strains, which can arise in layered heterostructures due to the...

457
Authors: Klara Lyutovich, Erich Kasper, Michael Oehme, Jens Werner, Tatiana S. Perova

Abstract: Molecular beam epitaxy is employed for the growth of strained-Si layers on top of virtual substrates with highly-relaxed ultrathin SiGe...

463
Authors: A.A. Evtukh, A. Kizjak, V.G. Litovchenko, Cor Claeys, Eddy Simoen
469
Authors: Ida E. Tyschenko, K.S. Zhuravlev, A.G. Cherkov, Andrzej Misiuk, V.P. Popov

Abstract: Cavity effect on the room-temperature (RT) photoluminescence (PL) from emitting centers in the top silicon layer of silicon-on-insulator...

477
Authors: V.I. Vdovin, M.G. Mil'vidskii, M.M. Rzaev, Friedrich Schäffler

Abstract: We present experimental data on the effect of low-temperature buffer layers on the dislocation structure formation in SiGe/Si strained-layer...

483
Authors: I.V. Antonova, L.L. Golik, M.S. Kagan, V.I. Polyakov, A.I. Rukavischnikov, N.M. Rossukanyi, J. Kolodzey

Abstract: Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report....

489
Authors: Daniel Macdonald, Prakash N.K. Deenapanray, Andres Cuevas, S. Diez, Stephan W. Glunz

Abstract: Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually...

497

Showing 71 to 80 of 129 Paper Titles