Gettering and Defect Engineering in Semiconductor Technology XI

Volumes 108-109

doi: 10.4028/www.scientific.net/SSP.108-109

Paper Title Page

Authors: Sergei K. Brantov, Vitaly V. Kveder, N.N. Kuznetzov, Valeri I. Orlov

Abstract: The paper describes the elaboration of a method for producing composite Si/SiC wafers and investigation of their properties. The known...

503
Authors: A.E. Belyaev, O. Polupan, W. Dallas, Sergei S. Ostapenko, D. Hess, John Wohlgemuth

Abstract: An experimental approach for fast crack detection and length determination in fullsize solar-grade crystalline silicon wafers using a...

509
Authors: Michael Ghosh, Marc Dietrich, Armin Müller, Stefan Peters, Detlef Sontag, Holger Neuhaus
515
Authors: Daniel Macdonald, Thomas Roth, L.J. Geerligs, Andres Cuevas

Abstract: Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been...

519
Authors: Santo Martinuzzi, Francesca Ferrazza, Isabelle Périchaud
525
Authors: M. Rossberg, M. Naumann, K. Irmscher, U. Juda, A. Lüdge, Michael Ghosh, Armin Müller

Abstract: The structural and electrical properties of as grown multicrystalline (mc) solar silicon have been characterized with special emphasis on...

531
Authors: Eddy Simoen, Cor Claeys, Eugenijus Gaubas, J.M. Rafí

Abstract: An overview is given of analytical techniques for the characterization of the electrical and transport parameters in thin (<1 µm)...

539
Authors: Yue Long Huang, Eddy Simoen, Cor Claeys, Reinhart Job, Yue Ma, Wolfgang Düngen, Wolfgang R. Fahrner, J. Versluys, Paul Clauws

Abstract: P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the...

547
Authors: Jan H. Bleka, Edouard V. Monakhov, Alexander G. Ulyashin, F. Danie Auret, Andrej Yu. Kuznetsov, B.S. Avset, Bengt Gunnar Svensson
553
Authors: F. Danie Auret, A.G.M. Das, C. Nyamhere, M. Hayes, N.G. van der Berg

Abstract: In this study we have investigated the thermal stability (in the range 100 oC - 900 oC) of defects introduced in p-Si by electron beam...

561

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