Gettering and Defect Engineering in Semiconductor Technology XI
Paper Title Page
Abstract: The paper describes the elaboration of a method for producing composite Si/SiC wafers and investigation of their properties. The known...
Abstract: An experimental approach for fast crack detection and length determination in fullsize solar-grade crystalline silicon wafers using a...
Abstract: Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been...
Abstract: The structural and electrical properties of as grown multicrystalline (mc) solar silicon have been characterized with special emphasis on...
Abstract: An overview is given of analytical techniques for the characterization of the electrical and transport parameters in thin (<1 µm)...
Abstract: P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the...
Abstract: In this study we have investigated the thermal stability (in the range 100 oC - 900 oC) of defects introduced in p-Si by electron beam...