Gettering and Defect Engineering in Semiconductor Technology XI

Volumes 108-109

doi: 10.4028/www.scientific.net/SSP.108-109

Paper Title Page

Authors: Eddy Simoen, A. Satta, Marc Meuris, Tom Janssens, T. Clarysse, A. Benedetti, C. Demeurisse, B. Brijs, I. Hoflijk, W. Vandervorst, Cor Claeys

Abstract: The formation of shallow junctions in germanium substrates, compatible with deep submicron CMOS processing is discussed with respect to...

691
Authors: R. Jones, A. Carvalho, J. Coutinho, Vitor J.B. Torres, Sven Öberg, Patrick R. Briddon

Abstract: The donor and acceptor levels of defects in Ge as well as in Si are found using a local density functional method applied to large...

697
Authors: Jacques Chevallier, T. Kociniewski, Cecile Saguy, R. Kalish, C. Cytermann, M. Barbé, D. Ballutaud, François Jomard, A. Deneuville, C. Baron, James E. Butler, Satoshi Koizumi

Abstract: The n-type doping of diamond with phosphorus suffers from defects reducing the electron mobilities and inducing some degree of compensation....

703
Authors: Stephanie Leclerc, Marie France Beaufort, Valerie Audurier, Alain Déclemy, Jean François Barbot

Abstract: Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium...

709
Authors: Anatoly M. Strel'chuk, Alexander A. Lebedev, A.E. Cherenkov, Alexey N. Kuznetsov, Alla S. Tregubova, M.P. Scheglov, L.M. Sorokin, S. Yoneda, Shigehiro Nishino

Abstract: Investigation of the multilayer 6H(n+)/3C(n)/6H(p+)-SiC heterostructure grown by sublimation epitaxy show that the injection...

713
Authors: Patrick Fiorenza, Raffaella Lo Nigro, Vito Raineri, Salvatore Lombardo
717
Authors: Mathias Kappa, Markus Ratzke, Jürgen Reif

Abstract: Hafnium oxide films were prepared by Pulsed Laser Deposition (PLD). The influence of laser wavelength (fundamental, second and third...

723
Authors: E.V. Kolesnikova, Alla A. Sitnikova, V.I. Sokolov, M.V. Zamoryanskaya

Abstract: During interaction between thin film SiO2 and electron beam with high power density, amorphous silicon dioxide modifies. Silicon...

729
Authors: Valentin V. Litvinov, Bengt Gunnar Svensson, L.I. Murin, J. Lennart Lindström, Vladimir P. Markevich

Abstract: Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and...

735
Authors: P. Zaumseil, T. Schroeder, G. Weidner

Abstract: The use of heteroepitaxial Si / Pr2O3 / Si(111) systems as semiconductor-insulatorsemiconductor (SIS) stacks in future applications requires...

741

Showing 111 to 120 of 129 Paper Titles