Gettering and Defect Engineering in Semiconductor Technology XI

Volumes 108-109

doi: 10.4028/

Paper Title Page

Authors: Jinggang Lu, George A. Rozgonyi, James Rand, Ralf Jonczyk

Abstract: The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam...

Authors: Matthias Stockmeier, Matthias Weisser, Rainer Hock, Andreas Magerl

Abstract: The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200°C and for process...

Authors: Domenico Mello, Francesco Cordiano, Andrea Gerosa, Margherita Padalino, Carmelo Gagliano, Giovanni Renna, Giovanni Franco

Abstract: Contamination controls are very important issues in microelectronics. Any wrong substance introduction in process chambers can cause damages...

Authors: Marko Yli-Koski, Hele Savin, E. Saarnilehto, Antti Haarahiltunen, Juha Sinkkonen, G. Berenyi, T. Pavelka

Abstract: We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates...

Authors: M.V. Zamoryanskaya, V.I. Sokolov

Abstract: In this work we studied the cathodoluminescence (CL) of thin silicon oxide and natural silicon oxide grown on different types of silicon...

Authors: Markus Zschorsch, G. Gärtner, Hans Joachim Möller, Wilfried von Ammon

Abstract: The content of interstitially solved oxygen (Oi) in heavily boron doped silicon (9- 29 mcm) were measured by low temperature Fourier...

Authors: Fabrizio Roccaforte, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti

Abstract: In this paper, some basic aspects related to defects and SiC devices performances are discussed. Our recent work is reviewed and inserted in...

Authors: Guillaume Lucas, Laurent Pizzagalli

Abstract: Using first principles molecular dynamics simulations, we have recently determined the threshold displacement energies and the associated...

Authors: Laurent Ottaviani, Damien Barakel, Vanessa Vervisch, Marcel Pasquinelli

Abstract: 4H-SiC epitaxial layers were hydrogenated by means of plasma treatment and annealing, aiming at passivating the surface by forming bonds...

Authors: Jan Vanhellemont, Steven Hens, J. Lauwaert, Olivier De Gryse, Piet Vanmeerbeek, Dirk Poelman, P. Śpiewak, Igor Romandic, Antoon Theuwis, Paul Clauws

Abstract: Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on...


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