Solid State Phenomena
Vol. 134
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Solid State Phenomena
Vols. 131-133
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Solid State Phenomena
Vol. 130
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Solid State Phenomena
Vol. 129
Vol. 129
Solid State Phenomena
Vol. 128
Vol. 128
Solid State Phenomena
Vol. 127
Vol. 127
Solid State Phenomena
Vols. 124-126
Vols. 124-126
Solid State Phenomena
Vols. 121-123
Vols. 121-123
Solid State Phenomena
Vol. 120
Vol. 120
Solid State Phenomena
Vol. 119
Vol. 119
Solid State Phenomena
Vol. 118
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Solid State Phenomena
Vols. 116-117
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Solid State Phenomena
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Solid State Phenomena Vols. 124-126
Paper Title Page
Abstract: In this paper, we studied the method of electrets electrode which formed to accumulate
negative electric charge by corona discharge. The breakdown voltage sample and damaged sample by
various corona discharges have made material stabilization and improved characteristics of electric
charge storage throughout the annealing process. After the experiment made material stabilization
nearly melting point by many kinds of annealing conditions, we did the corona discharge again by the
charged high voltage, a discharge electrode gap, and a discharged time. As we compared it with the
best condition, we confirmed that characteristics of electric charge storage were improved.
319
Abstract: Various annealing conditions after film deposition have a great effect on electrical and
structural properties of low-k films. In this work, we studied hydrogen atmosphere heat treatment
effect on low-k films. After the room temperature deposition of a-SiOC:H low-k films following
post-deposition-annealing (PDA) for 30 min. at 450°C in an N2 ambient, final annealing was
performed for 30 min. at 400°C in an N2, a forming gas 1 (5% H2 + 95% N2), and a forming gas 2
(10% H2 + 90% N2) ambient. The flat band voltage was shifted toward the ideal value of 0.61V after
two forming gas anneals, but it increased k values of the films. It was ascribed that hydrogen
effectively substitutes defect sites or structural imperfections of low-k films and makes the film more
hydrophilic. The FT-IR, XPS analyses and the contact angle measurement supported our conclusion.
323
Abstract: The formation, microstructure and electrical property of conductive ceramic composites
derived from polymer pyrolysis were investigated. Methylpolysiloxane was mixed with TiH2 as a
filler and pyrolyzed in nitrogen, argon and vacuum atmosphere at a temperature of 1600oC for 1
hour after the preheat treatment at 850oC in N2 atmosphere. Depending on the atmosphere
conditions, TiN and Ti5Si3 phases were formed by reaction of TiH2 as reactive filler and
atmospheric gas or pyrolytic product such as SiO2. Consequently, the microstructures of the ceramic
composites with 70 vol.%TiH2 pyrolyzed at 1600oC for 1 hour in vacuum were composed of TiN
and Ti5Si3 particles. The density and electrical conductivity of the ceramic composites were 97.3
TD% and 6200 ohm-1⋅cm-1, respectively. These composites pyrolyzed by polymer were considered
as superior conductive material with a value of 103 ~ 104 in log scale at room temperature.
331
Abstract: As-grown Sr2SiO4:Eu thin films on Si (100) substrates have been reduced by hydrogen
plasma reaction which was carried out by using radio frequency plasma enhanced chemical vapor
deposition system. The photoluminescence spectra, the crystal structure and the surface morphologies
of the plasma-reduced films were measured and compared with those of the as-grown films. At
as-grown state, Eu3+ and Eu2+ ions co-exist so that the photoluminescence spectra of the films reveal
several emission bands between 350 and 650 nm. They were due to f-f and f-d transitions within Eu3+
and Eu2+ ions. After the plasma-reduced process, the photoluminescence spectra of the films show a
remarkable increase of blue-green emission from the transitions of Eu2+ ions and decrease of red
emission from the transitions of Eu2+ ions.
335
Abstract: Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition
using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical
resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on
deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper
dopants may play an important role in determining their electrical properties, compared with undoped
films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction
(XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.
339
Abstract: In recent years, we have reported uncooled microbolometer with amorphous
vanadium-tungsten oxide as a thermometric material. The reported tungsten-doped vanadium oxide
showed very high TCR over -3.0%/K compared with common vanadium oxide, which generally has
the TCR values near -2.0%/K. In this work, we characterized properties of electrical conductivity of
amorphous tungsten-doped vanadium oxide by investigating electronic structure between vanadium
oxide and tungsten-doped vanadium oxide. Finally, it is concluded that tungsten addition into
vanadium give rise to changes of electronic structure when pure vanadium is oxidized and this
changes of electronic structure attribute to electrical properties such as high TCR values of
vanadium-tungsten oxide.
343
Abstract: Plasma diagnosis was performed by means of optical emission spectroscopy in the
plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon
oxide films. The chemical bonding states were characterized by a fourier-transform infrared
spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical
bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films
was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms
of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a
kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen
atoms.
347
Abstract: Characteristics of MgO layer deposited under hydrogen atmosphere were investigated.
Hydrogen gas was introduced during e-beam evaporation coating process of MgO layer and its effects
on microstructure, cathode luminescence spectra, discharge voltages and effective yield of secondary
electron emission were examined. The results indicated that the hydrogen influences the
concentration and energy levels of defects in MgO layer and that affects the luminance efficiency and
discharge delays of the panels significantly.
351
Abstract: Bi-based glass pastes were prepared in the mixed organic solvents (α-terpineol and texanol)
with different kinds and concentrations of organic dispersant such as fish oil , phosphate ester and
poly methyl methacrylate (PMMA). The rheological stability of glass pastes was characterized by
using a rheometer and adsorption behavior of organic additives for the glass powders was carried out
by using a thermal gravimetric analyzer (TGA).The Bi-based glass pastes exhibited the most stable
rheological behavior at an addition of phosphate ester of 0.5 in mass %, due to the steric repulsive
force acting on the surface of glass powers with adsorbing the organic additives. This study allowed
significant delay of the sedimentation time and suppressed generation of micropores during practical
forming process by a screen printing method.
355