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Gettering and Defect Engineering in Semiconductor Technology VIII

Solid State Phenomena Volumes 69 - 70

• Papers
• Abstracts

• p1 Silicon Wafer Technology. Status and Overlook at the Millennium and a Decade Beyond   [ 446 K ]
  Authors: A.P. Mozer
• p13 Self-Assembling Si/SiGe Nanostructures for Light Emitters   [ 489 K ]
  Authors: K. Eberl, O.G. Schmidt, O. Kienzle, F. Ernst
• p23 The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics   [ 864 K ]
  Authors: E.A. Steinman, Vitaly V. Kveder, V.I. Vdovin, Hermann G. Grimmeiss
• p33 Acoustically Driven Optical Parameters in Ⅱ-Ⅵ Photonic Materials   [ 440 K ]
  Authors: I.V. Ostrovskii, O.A. Korotchenkov
• p43 Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures   [ 643 K ]
  Authors: Arne Nylandsted Larsen
• p53 Status, Hopes and Limitations for the Si: Er-based 1.54 μm Emitter   [ 461 K ]
  Authors: W. Jantsch, S. Lanzerstorfer, Margarita Stepikhova, H. Preier, L. Palmetshofer
• p63 Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers   [ 577 K ]
  Authors: K. Sueoka, M. Akatsuka, Mitsuharu Yonemura, S. Sadamitsu, Eiichi Asayama, T. Ono, Y. Koike, H. Katahama
• p73 Grown-in Defects in High Temperature Annealed Si Wafers   [ 560 K ]
  Authors: N. Tsuchiya, Hideyoshi Matsushita, J. Sugamoto, Akira Kawasaki, Hiroshi Kubota
• p83 Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'   [ 568 K ]
  Authors: F.A. Reboredo, Sokrates T. Pantelides
• p93 Relaxation of Misfit Induced Strain in Si-Based Heterostructures   [ 579 K ]
  Authors: S.H. Christiansen, Horst P. Strunk, H. Wawra, M. Becker, M. Albrecht