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Gettering and Defect Engineering in Semiconductor Technology VIII

Solid State Phenomena Volumes 69 - 70

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• p149 Equilibrium Critical Thickness of Strained Buried SiGe Layers   [ 256 K ]
  Authors: A. Fischer, G. Kissinger, Hans Richter, P. Zaumseil
• p155 Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers   [ 288 K ]
  Authors: Eugenijus Gaubas, Eddy Simoen, C. Claeys, A. Poyai
• p161 Defect Control in Nitrogen Doped Czochralski Silicon Crystals   [ 461 K ]
  Authors: Atsushi Ikari, Katsuhiko Nakai, Y. Tachikawa, H. Deai, Y. Hideki, Yasumitsu Ohta, Naoya Masahashi, S. Hayashi, T. Hoshino, Wataru Ohashi
• p167 Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures   [ 255 K ]
  Authors: S. Kar, P. Zaumseil
• p173 Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells   [ 553 K ]
  Authors: O. Krüger, Martin Kittler, C. Häßler, Wolfgang Koch
• p179 Interaction between Point Defects and Dislocations in SiGe   [ 619 K ]
  Authors: Klara Lyutovich, F. Ernst, Erich Kasper, Monika Bauer, Michael Oehme
• p185 Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers   [ 366 K ]
  Authors: Edouard V. Monakhov, Andrej Yu. Kuznetsov, H.H. Radamson, Bengt G. Svensson
• p191 ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells   [ 251 K ]
  Authors: N. Sandersfeld, W. Jantsch, Zbysław Wilamowski, Friedrich Schäffler
• p197 Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon   [ 205 K ]
  Authors: De Ren Yang, Jie Zhang, L. Li, Duan Lin Que
• p203 X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices   [ 321 K ]
  Authors: P. Zaumseil, H. Rücker
• p209 Radiation Defects Formation in Si   [ 304 K ]
  Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, M. Höhne, W. Schröder
• p215 Oxygen and Peculiarities of its Precipitation in Si   [ 252 K ]
  Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, M. Höhne, W. Schröder
• p221 The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si_1-xGe_x Interfaces Abruptness   [ 267 K ]
  Authors: L.K. Orlov, A.V. Potapov, S.V. Ivin
• p229 Vacancy-Gettering in Silicon: Cavities and Helium-Implantation   [ 389 K ]
  Authors: F. Corni, R. Tonini, S. Frabboni, C. Nobili, G. Calzolari, S. Masetti, P. Tamarozzi, Giuseppe Pavia, G.F. Cerofolini
• p235 Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon   [ 346 K ]
  Authors: Reinhard Kögler, A. Peeva, W. Anwand, P. Werner, A.B. Danilin, Wolfgang Skorupa