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Materials Science Forum Vols. 196-201

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201

ToC:

Table of Contents

Paper Title Page

Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film
Authors: K.S. Seol, A. Ieki, Y. Ohki, Hironobu Nishikawa, M. Tachimori
1909
Spin-Dependent Transport in SiC and III-V Semiconductor Devices
Authors: N.M. Reinacher, M.S. Brandt, M. Stutzmann
1915
Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid
Authors: Hironobu Nishikawa, T. Soga, Takashi Jimbo, Masayoshi Umeno
1923
ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures
Authors: Yasunori Mochizuki, M. Mizuta, A. Mochizuki
1927
Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions
Authors: Yuki Hasegawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno
1933
Thermal and Athermal Migration of Ion-Irradiation Defects in Al0.3Ga0.7As/GaAs Heterostructures
Authors: Toshihiko Kanayama, Toshimi Wada, Yoshinobu Sugiyama
1939
Characterization of Mg+F, Mg+Ar Dual Ion Implanted AlxGa1-xAs(0≤x≤0.75) Layers
Authors: Naoki Hara, Haruyoshi Suehiro, Shigeru Kuroda
1943
Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy
Authors: S. Gwo, S. Miwa, H. Ohno, Jun Fei Fan, H. Tokumoto
1949
Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs
Authors: S.A. Goodman, F. Danie Auret, Y. Leclerc
1955
Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs
Authors: M. Murtagh, S. Hildebrandt, P.A.F. Herbert, G.M. O'Connor, G.M. Crean
1961

Showing 321 to 330 of 336 Paper Titles

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