Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Bharat Krishnan, Yaroslav Koshka

Abstract: Recombination-induced passivation (RIP) experiments were conducted on p-type SiC after plasma treatment in deuterium. Higher sensitivity of...

Authors: David Méndez, A. Aouni, Daniel Araújo, Etienne Bustarret, Gabriel Ferro, Yves Monteil

Abstract: The effect of the temperature at which the carbon source is introduced in the reactor on the early stages of the carbonization process is...

Authors: Kun Yuan Gao, Thomas Seyller, Konstantin V. Emtsev, Lothar Ley, Florin Ciobanu, Gerhard Pensl

Abstract: Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance...

Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans

Abstract: Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the...

Authors: J.M. Knaup, Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Wolfgang J. Choyke

Abstract: The density of interface traps (Dit) in thermally oxidized SiC is unacceptably high for MOS device fabrication. The most severe problem is...

Authors: Toshiharu Ohnuma, Hidekazu Tsuchida, Tamotsu Jikimoto, Atsumi Miyashita, Masahito Yoshikawa

Abstract: First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been...

Authors: João F. Justo, Cesar R.S. da Silva, I. Pereyra, Lucy V.C. Assali

Abstract: There is growing interest in understanding the properties of SiC-SiO2 interfaces, which can be formed by oxidation of silicon carbide...

Authors: Charíya Virojanadara, Leif I. Johansson
Authors: Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, Takeshi Hattori

Abstract: Thermal oxide films on SiC epitaxial (000-1) C-faces have been characterized by angle-resolved photoemission spectroscopy (AR-PES). The...

Authors: Kevin Matocha, Jesse B. Tucker, Ed Kaminsky

Abstract: Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and...


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