Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: E. Rauls, Uwe Gerstmann, M.V.B. Pinheiro, Siegmund Greulich-Weber, Johann Martin Spaeth

Abstract: In a combined theoretical and experimental work, we have investigated the common DI photoluminescence in 6H-SiC material. We present an...

Authors: Reino Aavikko, Kimmo Saarinen, Björn Magnusson, Erik Janzén

Abstract: Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature...

Authors: Marie France Barthe, L. Henry, S. Arpiainen, G. Blondiaux

Abstract: This paper presents positron lifetime results which give information on the nature of vacancy defects induced by electron irradiation in...

Authors: M.V.B. Pinheiro, E. Rauls, Uwe Gerstmann, Siegmund Greulich-Weber, Johann Martin Spaeth

Abstract: We identify the VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC samples. Based on the analysis of new photo-excited EPR spectra, and...

Authors: S. Dannefaer, V. Avalos, Rositza Yakimova
Authors: Alfonso Ruggiero, M. Zimbone, Fabrizio Roccaforte, Sebania Libertino, Francesco La Via, Ricardo Reitano, Lucia Calcagno

Abstract: Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with...

Authors: P.G. Baranov, Ivan V. Ilyin, Marina V. Muzafarova, E.N. Mokhov, S.G. Konnikov

Abstract: The high-temperature stable defect complexes in 6H-SiC crystals created by heavy neutron irradiation and following high-temperature...

Authors: Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Adam Gali, Frank Schmid, Gerhard Pensl, Günter Wagner

Abstract: A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950°C to 1500°C....

Authors: H. K.-Nielsen, Anders Hallén, D.M. Martin, Bengt Gunnar Svensson
Authors: Uwe Gerstmann, E. Rauls, Harald Overhof, Thomas Frauenheim

Abstract: The conclusion which is drawn from the EPR line broadening and narrowing of the N shallow donor in an isotope enriched and non-enriched...


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