Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Sandrine Juillaguet, Jean Camassel

Abstract: Focussing on the fine structure of excitons bound to large 2-dimensional stacking faults in a 4H-SiC matrix, we show that the intrinsic...

Authors: Björn Magnusson, Erik Janzén

Abstract: Deep levels in 4H- and 6H-SiC are characterized by FTIR spectroscopy. Vanadium, chromium and the silicon vacancy related center are listed...

Authors: John W. Steeds, S.A. Furkert, W. Sullivan, J.M. Hayes, Nicolas G. Wright

Abstract: New results are presented concerning several optical centres having local vibrational modes in electron irradiated and annealed 4H and 6H...

Authors: Nguyen Tien Son, Junichi Isoya, Satoshi Yamasaki, Erik Janzén

Abstract: Shallow N donors in n-type 4H-SiC were studied by electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR). For...

Authors: Katsunori Danno, Tsunenobu Kimoto, Hiroyuki Matsunami

Abstract: Midgap levels in 4H-SiC epilayers have been investigated by DLTS. The EH6/7 center (Ec-1.55 eV) is the dominant deep level as observed in...

Authors: Antonio Castaldini, Anna Cavallini, L. Rigutti, Filippo Nava

Abstract: The effects of irradiation with protons and electrons on 4H-silicon carbide epilayers were investigated. The particle energy was 6.5 and 8.2...

Authors: Giovanni Alfieri, Edouard V. Monakhov, Margareta K. Linnarsson, Bengt Gunnar Svensson

Abstract: Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced...

Authors: L. Storasta, F.H.C. Carlsson, Peder Bergman, Erik Janzén

Abstract: Recombination enhanced defect annealing of intrinsic defects in 4H-SiC, created by low energy electron irradiation, has been observed. A...

Authors: Ricardo Reitano, M. Zimbone, Paolo Musumeci, P. Baeri

Abstract: Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of...

Authors: Evgenia V. Kalinina, G. Kholuyanov, G. Onushkin, D.V. Davydov, Anatoly M. Strel'chuk, Andrey O. Konstantinov, Anders Hallén, V.A. Skuratov, Andrej Yu. Kuznetsov

Abstract: The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of...


Showing 81 to 90 of 255 Paper Titles