Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Hideki Shimizu, Kensaku Hisada, Yosuke Aoyama

Abstract: Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100)...

Authors: Jörg Pezoldt, Efstathios K. Polychroniadis, Thomas Stauden, Gernot Ecke, Thierry Chassagne, P. Vennéguès, André Leycuras, D. Panknin, J. Stoemenos, Wolfgang Skorupa

Abstract: The influence of the different additions to the melt on the nucleation behavior during short time flash lamp processing was investigated....

Authors: M. Smith, R.A. McMahon, Wolfgang Skorupa, M. Voelskow, J. Stoemenos

Abstract: This paper gives an insight into the thermal modeling of the i-FLASiC process, which is the flash lamp annealing of a 3C-SiC and silicon...

Authors: A. Shoji, Mitsutaka Nakamura, K. Mitikami, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino

Abstract: The pendeo epitaxial growth has been applied for the growth of 3C-SiC on (001) Si substrates. This growth was performed by VPE using...

Authors: Didier Chaussende, Laurence Latu-Romain, Laurent Auvray, M. Ucar, Michel Pons, Roland Madar

Abstract: Thick (111) oriented β-SiC layers have been grown by hetero-epitaxy on a (0001) a-SiC substrate with the Continuous Feed-Physical Vapour...

Authors: Efstathios K. Polychroniadis, Carole Balloud, Sandrine Juillaguet, Gabriel Ferro, Yves Monteil, Jean Camassel, J. Stoemenos

Abstract: The evolution of defects versus thickness has been investigated in three different freestanding 3C-SiC samples, using TEM (Transmission...

Authors: M. Voelskow, D. Panknin, Efstathios K. Polychroniadis, Gabriel Ferro, Phillippe Godignon, Narcis Mestres, Wolfgang Skorupa, Yves Monteil, J. Stoemenos

Abstract: An approach for the defect density reduction in 3C-SiC epitaxially grown on Si is to improve the quality of the carbonized layer during the...

Authors: T. Nakata, Y. Ohshiro, A. Shoji, Yoichi Okui, Satoru Ohshima, Yoshihiko Hayashi, Shigehiro Nishino

Abstract: The selective growth of Si column was carried out by depositing Au on patterned Si (111) substrate as a solvent in chemical vapor transport...

Authors: Mikael Syväjärvi, L. Nasi, Gholam Reza Yazdi, Giancarlo Salviati, M. Izadifard, I.A. Buyanova, W.M. Chen, Rositza Yakimova

Abstract: Ferromagnetic phases in as-grown SiC have been studied. An interpretation about the formation based on details of the phase appearance in...

Authors: V.I. Kulik, A.V. Kulik, M.S. Ramm, A.S. Nilov, M.V. Bogdanov

Abstract: Two-dimensional model of conjugate heat and mass transport in Chemical Vapour Infiltration (CVI) process was developed. The model was used...


Showing 51 to 60 of 255 Paper Titles