Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami

Abstract: 4H-SiC layers have been homoepitaxially grown on off-axis 4H-SiC(000-1) under various conditions by horizontal hot-wall CVD. Improvement of...

Authors: Hiroaki Saitoh, Tsunenobu Kimoto

Abstract: Chemical vapor deposition of 4H-SiC on (0001) substrates with various off-angles from 1o to 45o has been investigated. On large-off-angled...

Authors: Kazutoshi Kojima, Hajime Okumura, Satoshi Kuroda, Kazuo Arai, Akihiko Ohi, Hiroyuki Akinaga

Abstract: Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face...

Authors: Hidekazu Tsuchida, Toshiyuki Miyanagi, Isaho Kamata, Tomonori Nakamura, Kunikaza Izumi, Koji Nakayama, R. Ishii, Katsunori Asano, Yoshitaka Sugawara

Abstract: In this paper, we investigated the density of basal plane dislocations (BPDs) in 4H-SiC epilayers grown on (0001) and (000-1). Re-polishing...

Authors: Anne Henry, Erik Janzén

Abstract: The phosphorus incorporation into SiC epilayer is studied when varying the CVD process growth parameters and the results are compared with...

Authors: Galyna Melnychuck, Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt

Abstract: Mechanisms and consequences of silicon vapor condensation during SiC epitaxial growth or implant annealing with silane overpressure were...

Authors: Günter Wagner, D. Schulz, J. Doerschel

Abstract: Growth of 4H-SiC epitaxial layers has been performed in a horizontal hot-wall CVD (chemical vapor deposition) reactor using ...

Authors: Ze Hong Zhang, Ying Gao, Arul Arjunan, Eugene Toupitsyn, Priyamvada Sadagopan, Robert M. Kennedy, Tangali S. Sudarshan

Abstract: Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition...

Authors: Caroline Blanc, Marcin Zielinski, Veronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Yves Monteil

Abstract: We report an experimental investigation of the residual (n-type) and intentional (p-type) doping level of <11-20> epitaxial layers grown on...

Authors: C. Sartel, Veronique Soulière, Marcin Zielinski, Yves Monteil, Jean Camassel, S. Rushworth

Abstract: We report on the study of the p-type doping of 4H-SiC material using HexaMethylDiSilane/TriMethylAluminium/Propane (HMDS/TMA/P) system in...


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