Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/www.scientific.net/MSF.483-485

Paper Title Page

Authors: K.L. Safonov, Yuri V. Trushin, Oliver Ambacher, Jörg Pezoldt

Abstract: Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be...

169
Authors: Petia Weih, Henry Romanus, Thomas Stauden, Lothar Spieß, Oliver Ambacher, Jörg Pezoldt

Abstract: In the present work cubic 3C-(Si1-xC1-y)Gex+y solid solutions were grown at different^temperatures by molecular beam epitaxy on on-axis...

173
Authors: S. Sugishita, A. Shoji, Yoshihiko Mukai, Taro Nishiguchi, K. Michikami, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino

Abstract: Lateral epitaxial overgrowth (LEO) is known as method of defects reduction for GaN. LEO is expected to reduce crystal defects on...

177
Authors: Mitsutaka Nakamura, Toshiyuki Isshiki, Taro Nishiguchi, Koji Nishio, Satoru Ohshima, Shigehiro Nishino

Abstract: Hetero-epitaxial CVD growth of 3C-SiC on a Si(110) substrate gives a (111) crystal with low defects density. However, double positioning...

181
Authors: Toshiyuki Isshiki, Mitsutaka Nakamura, Taro Nishiguchi, Koji Nishio, Satoru Ohshima, Shigehiro Nishino

Abstract: Interfaces between a Si(110) substrate and 3C-SiC crystals grown hetero-epitaxially by CVD were investigated by cross-sectional transmission...

185
Authors: David Méndez, A. Aouni, Daniel Araújo, Gabriel Ferro, Yves Monteil, Etienne Bustarret

Abstract: One of the problems with Si(001)/3C-SiC templates is that they involve highly defective interfaces due to the presence of misfit...

189
Authors: Taro Nishiguchi, Mitsutaka Nakamura, Koji Nishio, Toshiyuki Isshiki, Satoru Ohshima, Shigehiro Nishino

Abstract: Chemical vapor deposition of (111) 3C-SiC on (110) Si substrate was carried out, and the effect of the substrate off-axis introduced on...

193
Authors: Hugues Mank, Catherine Moisson, Daniel Turover, Mark E. Twigg, Stephen E. Saddow

Abstract: In this work, we have investigated the 3C-SiC re-growth on planarized 3C-SiC epitaxial layers, grown on (001)Si, after the application of a...

197
Authors: Christian Förster, Volker Cimalla, Oliver Ambacher, Jörg Pezoldt

Abstract: In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below...

201
Authors: Motoi Nakao, Hirofumi Iikawa, Katsutoshi Izumi, Takashi Yokoyama, Sumio Kobayashi

Abstract: 200 mm wafer with 3C-SiC/SiO2/Si structure has been fabricated using 200 mm siliconon- insulator (SOI) wafer. A top Si layer of 200 mm SOI...

205

Showing 41 to 50 of 255 Paper Titles