Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Gabriel Ferro, D. Panknin, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa, J. Stoemenos

Abstract: Thin 3C-SiC films epitaxially grown on Si-substrate are substantially improved by the FLASIC process, which involves irradiation with flash...

Authors: Hosni Idrissi, Maryse Lancin, Joel Douin, G. Regula, Bernard Pichaud

Abstract: 4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects were identified by Weak Beam...

Authors: Sergey Y. Davydov

Abstract: The pressure dependences of the second-order elastic constants ij C and the velocity of sound in 3C-SiC and 2H-SiC crystals are calculated...

Authors: Christoph Seitz, Z.G. Herro, Boris M. Epelbaum, Albrecht Winnacker, Rainer Hock, Andreas Magerl

Abstract: A structural characterisation of the first [01-15] grown 6H SiC crystals is presented. They show a different micro domain structure outside...

Authors: G. Agrosì, R.A. Fregola, A. Monno, Eugenio Scandale, G. Tempesta

Abstract: X-Ray Diffraction Topography (XRDT) and Optical Microscopy (OM) are adopted to study extended structural defects in 6H-SiC bulky crystals....

Authors: Tomohisa Kato, Kazutoshi Kojima, Shin Ichi Nishizawa, Kazuo Arai

Abstract: We report defects study in 4H-SiC bulk crystals grown by sublimation method on micropipe filled seed crystals oriented (0001) on-axis. The...

Authors: Efstathios K. Polychroniadis, Alkyoni Mantzari, A. Freudenberg, Jürgen Wollweber, R. Nitschke, Thomas Frank, Gerhard Pensl, Adolf Schöner

Abstract: The aim of the present work is to grow 3C-SiC on (0001) 6H-SiC seeds using the Physical Vapour Transport (PVT) method and to study the...

Authors: Syunsuke Izumi, Hidekazu Tsuchida, Takeshi Tawara, Isaho Kamata, Kunikaza Izumi

Abstract: We investigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the...

Authors: Augustinas Galeckas, H. K.-Nielsen, Jan Linnros, Anders Hallén, Bengt Gunnar Svensson, P. Pirouz

Abstract: The effects of hydrogen and proton irradiation on stacking fault formation in 4H-SiC are investigated by an optical pump-probe method of...

Authors: Jean Camassel, Sandrine Juillaguet

Abstract: In 4H-SiC, 3C stacking fault (SF) behaves like a finite thickness type II quantum well. As a consequence, it can bind two excitons per well....


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