Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/www.scientific.net/MSF.483-485

Paper Title Page

Authors: Y. Shishkin, Yue Ke, Robert P. Devaty, Wolfgang J. Choyke

Abstract: A brief historical development of porous SiC and GaN is given. SEM images of nine porous morphologies in 4H, 6H and 3C SiC are shown along...

251
Authors: Yi Chen, Satoko Shoji, S. Sugishita, Satoru Ohshima, Shigehiro Nishino

Abstract: The preparation of porous 4H-SiC by electrochemical etching of SiC crystals was investigated. The porous layer was created at the porous...

257
Authors: V.B. Shuman, N.S. Savkina

Abstract: We have studied effects of thermal treatment in vacuum and wet oxidation on the optical transmission of SiC samples with porous layer on the...

261
Authors: I.L. Shulpina, N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Mikael Syväjärvi, Rositza Yakimova

Abstract: The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two...

265
Authors: Marina G. Mynbaeva, A. Lavrent'ev, I. Kotousova, A.N. Volkova, K. Mynbaev, Alexander A. Lebedev

Abstract: Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at...

269
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, L. Ke, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke

Abstract: The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is...

273
Authors: Hans Jürgen von Bardeleben, J.L. Cantin, I. Vickridge, Yong Wei Song, S. Dhar, Leonard C. Feldman, John R. Williams, L. Ke, Y. Shishkin, Robert P. Devaty, Wolfgang J. Choyke

Abstract: The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in...

277
Authors: Sakwe Aloysius Sakwe, Z.G. Herro, Peter J. Wellmann

Abstract: Etching temperature and time are important parameters in the etching of SiC single crystals in molten KOH for defect studies. However,...

283
Authors: H. Colder, M. Morales, Richard Rizk, I. Vickridge

Abstract: Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used...

287
Authors: Y. Morilla, J. García López, Gábor Battistig, J.L. Cantin, Juan Carlos Cheang-Wong, Hans Jürgen von Bardeleben, M.A. Respaldiza

Abstract: 6H-SiC single crystalline substrates were implanted at room temperature with 2 MeV Al2+ ions to fluences from 2×1014 Al2+ cm-2 to 7×1014...

291

Showing 61 to 70 of 255 Paper Titles