Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Christophe Jacquier, Gabriel Ferro, Marcin Zielinski, Efstathios K. Polychroniadis, A. Andreadou, Jean Camassel, Yves Monteil

Abstract: The so-called VLS (Vapour-Liquid-Solid) mechanism in an Al-Si melt has recently demonstrated the capability to grow at low temperature...

Authors: S. Yoneda, Tomoaki Furusho, H. Takagi, S. Ohta, Shigehiro Nishino

Abstract: For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality...

Authors: Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Abstract: Epitaxial growth of 4H-SiC has been carried out at temperatures up to 1650 oC on 4HSiC substrates dipped in strongly diluted Si-based...

Authors: Albert A. Burk, Michael J. O'Loughlin, Michael J. Paisley, Adrian R. Powell, M.F. Brady, Stephan G. Müller, S.T. Allen

Abstract: Experimental results are presented for SiC epitaxial layer growths employing a largearea, 7x3-inch, warm-wall planetary SiC-VPE reactor....

Authors: Bernd Thomas, Christian Hecht

Abstract: In this paper we present recent results of epitaxial growth of 4H-SiC on 3” (0001) 8° and 4° off-oriented wafers using a multi-wafer...

Authors: Johji Nishio, Chiharu Ota, Takashi Shinohe, Kazutoshi Kojima, Hajime Okumura

Abstract: The epitaxial overgrowth process was examined with a view to realizing the p-buried floating junction structure. The growth condition was...

Authors: H. Fujiwara, Tsunenobu Kimoto, T. Tojo, Hiroyuki Matsunami

Abstract: Generation of stacking faults (SFs) in fast epitaxial growth of 4H-SiC(0001) has been reduced in vertical hot-wall chemical vapor deposition...

Authors: Joseph J. Sumakeris, Mrinal K. Das, Seo Young Ha, Edward Hurt, Kenneth G. Irvine, Michael J. Paisley, Michael J. O'Loughlin, John W. Palmour, Marek Skowronski, H. McD. Hobgood, Calvin H. Carter Jr.

Abstract: We present a survey of the most important factors relating to an epitaxial SiC growth process that is suitable for bipolar power devices....

Authors: Can Hua Li, Peter A. Losee, Joseph Seiler, T. Paul Chow, I. Bhat

Abstract: Selective nitrogen doping of 4H-SiC by epitaxial growth using TaC as the high temperature mask has been demonstrated. Nomarski optical...

Authors: Andreas Fissel

Abstract: The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod),...


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