Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: David J. Meyer, Morgen S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis

Abstract: Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and...

Authors: Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami

Abstract: Technological aspects of ion implantation in SiC device processes are described. Annealing techniques to suppress surface roughening of...

Authors: S. Mitani, Seiji Yamaguchi, S. Furukawa, T. Nakata, Yuji Horino, Rudi Ono, Y. Hosokawa, M. Miyamoto, Shigehiro Nishino

Abstract: Most of the ion implanter is large scale, high acceleration voltage and expensive. For research and development, such a huge implanter is...

Authors: Masami Shibagaki, Yasumi Kurematsu, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Masataka Satoh

Abstract: We develop the rapid thermal anneal system of the implanted SiC, Electron Bombardment Anneal System (EBAS), which is able to heat up to 1900...

Authors: Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, C. Mark Johnson, Praneet Bhatnagar, Peter Tappin

Abstract: New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect...

Authors: Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami

Abstract: The authors have investigated electrical behavior of implanted Al and B atoms near a “tail” region in 4H-SiC (0001) after high-temperature...

Authors: Martin Rambach, Anton J. Bauer, Lothar Frey, Peter Friedrichs, Heiner Ryssel

Abstract: Furnace annealing and lamp annealing of aluminum implanted layers in 4H silicon carbide (SiC) were investigated with respect to surface...

Authors: Fabio Bergamini, Francesco Moscatelli, Mariaconcetta Canino, Antonella Poggi, Roberta Nipoti

Abstract: We report on the electrical characterization of Al+ implanted p+/n 4H-SiC diodes via a planar technology. Hot implantation at 400°C and post...

Authors: Fabio Bergamini, Shailaja P. Rao, Stephen E. Saddow, Roberta Nipoti

Abstract: Al+ implanted p+/n 4H-SiC diodes were realized via planar technology. The p+/n junctions were obtained by hot implantation at 400°C,...

Authors: Mihai Lazar, Christophe Jacquier, Christiane Dubois, Christophe Raynaud, Gabriel Ferro, Dominique Planson, Pierre Brosselard, Yves Monteil, Jean-Pierre Chante

Abstract: Al-Si patterns were formed on n-type 4H-SiC substrate by a photolithographic process including wet Al etching and Si/SiC reactive ion...


Showing 141 to 150 of 255 Paper Titles