Silicon Carbide and Related Materials 2004

Volumes 483-485

doi: 10.4028/

Paper Title Page

Authors: Samir Zelmat, Marie Laure Locatelli, Thierry Lebey

Abstract: Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However,...

Authors: Tomonori Nakamura, Toshiyuki Miyanagi, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi

Abstract: We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo...

Authors: Oleg A. Agueev, Sergey P. Avdeev, Alexander M. Svetlichnyi, Raisa V. Konakova, Victor V. Milenin, Petr M. Lytvyn, Oksana S. Lytvyn, Olga B. Okhrimenko, Stanislav I. Soloviev, Tangali S. Sudarshan

Abstract: An effect of electron beam annealing (EBA) on both surface morphology and characteristics of test Ti/n-6H-SiC contacts was investigated. It...

Authors: Fabrizio Roccaforte, Filippo Giannazzo, Corrado Bongiorno, Sebania Libertino, Francesco La Via, Vito Raineri

Abstract: The effects of ion irradiation on the Ti/4H-SiC Schottky barrier are discussed. The Ti/SiC interfacial region of test Schottky diodes was...

Authors: Sergio Ferrero, A. Albonico, Umberto M. Meotto, G. Rambolà, Samuele Porro, Fabrizio Giorgis, Denis Perrone, Luciano Scaltrito, E. Bontempi, L.E. Depero, G. Richieri, Luigi Merlin

Abstract: In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been...

Authors: Francesco Moscatelli, Andrea Scorzoni, Antonella Poggi, Mariaconcetta Canino, Roberta Nipoti

Abstract: Recently Ni/SiC contacts have been studied in order to achieve very low contact resistivity (rc) values on n-type SiC. In this work contact...

Authors: S. Soubatch, Ulrich Starke

Abstract: Low-energy electron diffraction (LEED), scanning tunneling microscopy (STM) and spectroscopy (STS), and Auger electron spectroscopy (AES)...

Authors: Antonio Castaldini, Anna Cavallini, Marco Rossi, M. Cocuzza, C. Ricciardi

Abstract: We report on the investigation of electrical properties of polycrystalline 3C-SiC thin films deposited on oxidized Si by low pressure...

Authors: Lilyana Kolaklieva, Roumen Kakanakov, Ts. Marinova, G. Lepoeva

Abstract: X-ray photoelectron spectroscopy is used to study the effect of the metal composition on the electrical and thermal properties of...

Authors: J. Anthony Powell, Philip G. Neudeck, Andrew J. Trunek, Phillip B. Abel

Abstract: This paper presents new observations resulting from in-situ high temperature hydrogen etching of 4H-SiC mesas that were step-free prior to...


Showing 171 to 180 of 255 Paper Titles